BUK754R0-40C,127 NXP Semiconductors, BUK754R0-40C,127 Datasheet - Page 8

• Manufacturer Part Number: BUK754R0-40C,127
• Description: MOSFET N-CH 40V 100A TO-220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK754R0-40C,127

• Input Capacitance (ciss) @ Vds: 5708pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 97nC @ 10V
• Power - Max: 203W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5226

NXP Semiconductors
BUK754R0-40C
Product data sheet
Fig 9.
Fig 11. Normalized drain-source on-state resistance
(A)
200
I
150
100
D
50
1.5
0.5
a
0
2
1
0
function of drain-source voltage; typical values
-60
factor as a function of junction temperature
Output characteristics: drain current as a
0
20
10
1.5
0
V
GS
(V) =
6.5
60
3
120
4.5
All information provided in this document is subject to legal disclaimers.
V
T
003aac576
DS
j
03ne89
( ° C)
5.75
5.25
(V)
5.5
6
5
180
6
Rev. 02 — 20 July 2010
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Drain-source on-state resistance as a function
V
R
GS(th)
(mΩ )
(V)
DSon
22
17
12
7
2
5
4
3
2
1
0
−60
junction temperature
of drain current; typical values
0
V
N-channel TrenchMOS standard level FET
GS
(V) =
4.5
0
60
BUK754R0-40C
5
60
5.25
max
min
typ
120
5.5
120
© NXP B.V. 2010. All rights reserved.
I
003aac579
D
T
j
(A)
(°C)
03aa32
5.75
6.5
10
20
6
180
180
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