BUK754R0-40C,127 NXP Semiconductors, BUK754R0-40C,127 Datasheet

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BUK754R0-40C,127

Manufacturer Part Number
BUK754R0-40C,127
Description
MOSFET N-CH 40V 100A TO-220AB
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK754R0-40C,127

Input Capacitance (ciss) @ Vds
5708pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
97nC @ 10V
Power - Max
203W
Mounting Type
Through Hole
Package / Case
TO-220-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-5226
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package using advanced TrenchMOS technology. This product has been designed
and qualified to the appropriate AEC standard for use in high performance automotive
applications.
Table 1.
Symbol
V
I
P
Static characteristics
R
D
DS
tot
DSon
BUK754R0-40C
N-channel TrenchMOS standard level FET
Rev. 02 — 20 July 2010
AEC Q101 compliant
Avalanche robust
12V Motor, lamp and solenoid loads
High performance automotive power
systems
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
Conditions
T
V
see
T
V
T
see
j
mb
j
GS
GS
≥ 25 °C; T
= 25 °C; see
Figure
Figure 12
= 25 °C; see
= 10 V; T
= 10 V; I
1; see
j
D
≤ 175 °C
mb
= 25 A;
Figure
= 25 °C;
Figure 2
Suitable for standard level gate drive
Suitable for thermally demanding
environment up to 175°C rating
High performance Pulse Width
Modulation (PWM) applications
Figure 3
11;
[1]
Min
-
-
-
-
Product data sheet
Typ
-
-
-
3.4
Max Unit
40
100
203
4
V
A
W
mΩ

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BUK754R0-40C,127 Summary of contents

Page 1

... BUK754R0-40C N-channel TrenchMOS standard level FET Rev. 02 — 20 July 2010 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance automotive applications ...

Page 2

... Figure see Figure 13 Simplified outline SOT78 (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 02 — 20 July 2010 BUK754R0-40C N-channel TrenchMOS standard level FET Min Typ ≤ sup = °C; ...

Page 3

... Figure °C; see Figure °C mb ≤ 10 µs; pulsed ° ≤ 100 sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 02 — 20 July 2010 BUK754R0-40C Min Max - [1] -20 20 [2] Figure 1; - 159 [3] Figure 1 - 100 [3] Figure 1; - 100 - 636 - 203 ...

Page 4

... P der (%) ( ° C) 125 175 T mb Fig 2. Limit DSon All information provided in this document is subject to legal disclaimers. Rev. 02 — 20 July 2010 BUK754R0-40C N-channel TrenchMOS standard level FET 120 100 150 Normalized total power dissipation as a function of mounting base temperature (V) DS 03na19 200 T (° ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK754R0-40C Product data sheet N-channel TrenchMOS standard level FET Conditions see Figure 4 vertical in still air - All information provided in this document is subject to legal disclaimers. Rev. 02 — 20 July 2010 BUK754R0-40C Min Typ Max - - 0. 003aac590 t p δ = ...

Page 6

... °C j from source lead to source bond pad ; ° ° see Figure /dt = -100 A/µ - All information provided in this document is subject to legal disclaimers. Rev. 02 — 20 July 2010 BUK754R0-40C Min Typ Max = 25 ° -55 ° 4 500 - 0. 100 - 2 ...

Page 7

... V (V) GS Fig 6. 003aac584 ( ° (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 20 July 2010 BUK754R0-40C N-channel TrenchMOS standard level FET Forward transconductance as a function of drain current; typical values −1 min typ −2 −3 −4 −5 − ...

Page 8

... Fig 12. Drain-source on-state resistance as a function of drain current; typical values All information provided in this document is subject to legal disclaimers. Rev. 02 — 20 July 2010 BUK754R0-40C N-channel TrenchMOS standard level FET max typ min 0 60 120 T 003aac579 4.5 5 5.25 5.5 ...

Page 9

... Product data sheet Q GD 003aaa508 Fig 14. Gate-source voltage as a function of gate 003aac585 C iss C oss C rss (V) DS Fig 16. Source (diode forward) current as a function of All information provided in this document is subject to legal disclaimers. Rev. 02 — 20 July 2010 BUK754R0-40C N-channel TrenchMOS standard level FET ° 14V ...

Page 10

... 1.3 0.7 16.0 6.6 10.3 2.54 1.0 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 02 — 20 July 2010 BUK754R0-40C N-channel TrenchMOS standard level FET mounting base ( max. 15.0 3.30 3 ...

Page 11

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK754R0-40C v.2 20100720 • Modifications: Status changed from preliminary to product. • Various changes to content. BUK754R0-40C v.1 20090114 BUK754R0-40C Product data sheet N-channel TrenchMOS standard level FET Data sheet status Change notice ...

Page 12

... All information provided in this document is subject to legal disclaimers. Rev. 02 — 20 July 2010 BUK754R0-40C N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...

Page 13

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 20 July 2010 BUK754R0-40C N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 20 July 2010 Document identifier: BUK754R0-40C ...

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