BUK754R0-40C,127 NXP Semiconductors, BUK754R0-40C,127 Datasheet - Page 2

• Manufacturer Part Number: BUK754R0-40C,127
• Description: MOSFET N-CH 40V 100A TO-220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK754R0-40C,127

• Input Capacitance (ciss) @ Vds: 5708pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 97nC @ 10V
• Power - Max: 203W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5226

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
BUK754R0-40C
Product data sheet
Pin
1
2
3
mb
Type number
BUK754R0-40C
Symbol Description
G
D
S
D
Pinning information
Ordering information
gate
drain
source
mounting base; connected to
drain
Table 1.
[1]
Package
Name
TO-220AB
Symbol
Avalanche ruggedness
E
Dynamic characteristics
Q
DS(AL)S
GD
Continuous current is limited by package.
Quick reference data
Parameter
non-repetitive
drain-source
avalanche energy
gate-drain charge
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 20 July 2010
Simplified outline
SOT78 (TO-220AB)
…continued
Conditions
I
R
T
V
V
see
see
D
1 2
j(init)
GS
DS
GS
= 100 A; V
mb
Figure
Figure 13
= 32 V; T
= 10 V; I
= 50 Ω; V
= 25 °C; unclamped
3
N-channel TrenchMOS standard level FET
14;
D
sup
j
GS
= 25 °C;
= 25 A;
≤ 40 V;
= 10 V;
Graphic symbol
BUK754R0-40C
mbb076
G
Min
-
-
© NXP B.V. 2010. All rights reserved.
D
S
Typ
-
35
Version
SOT78
Max Unit
292
-
2 of 14
mJ
nC