BUK754R0-40C,127 NXP Semiconductors, BUK754R0-40C,127 Datasheet - Page 4

• Manufacturer Part Number: BUK754R0-40C,127
• Description: MOSFET N-CH 40V 100A TO-220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK754R0-40C,127

• Input Capacitance (ciss) @ Vds: 5708pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 97nC @ 10V
• Power - Max: 203W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5226

NXP Semiconductors
BUK754R0-40C
Product data sheet
Fig 1.
Fig 3.
I
D
(A)
10
(A)
200
150
100
10
10
I
D
50
10
-1
0
3
2
1
10
function of mounting base temperature.
Normalized continuous drain current as a
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
25
-1
Capped at 100A due to package
75
Limit R
125
DSon
T
All information provided in this document is subject to legal disclaimers.
mb
003aac893
1
= V
( ° C)
DS
175
/ I
Rev. 02 — 20 July 2010
D
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
DC
N-channel TrenchMOS standard level FET
10
50
BUK754R0-40C
100
V
DS
(V)
150
t
100 μs
1 ms
10 ms
100 ms
p
© NXP B.V. 2010. All rights reserved.
= 10 μs
T
mb
003aac581
03na19
(°C)
10
200
2
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