PSMN023-80LS,115 NXP Semiconductors, PSMN023-80LS,115 Datasheet - Page 9

• Manufacturer Part Number: PSMN023-80LS,115
• Description: MOSFET N-CH QFN3333
• Manufacturer: NXP Semiconductors

Specifications of PSMN023-80LS,115

• Input Capacitance (ciss) @ Vds: 1295pF @ 40V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 23 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 34A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 21nC @ 10V
• Power - Max: 65W
• Mounting Type: Surface Mount
• Package / Case: 8-VDFN Exposed Pad
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 23 mOhms
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 34 A
• Power Dissipation: 65 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5583-2

NXP Semiconductors
PSMN023-80LS
Product data sheet
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
V
GS
= 0 V
(A)
I
S
40
30
20
10
0
0
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 18 August 2010
0.3
T
j
= 175 °C
N-channel QFN3333 80 V 23 mΩ standard level MOSFET
0.6
0.9
T
V
003aae508
j
SD
= 25 °C
(V)
1.2
PSMN023-80LS
© NXP B.V. 2010. All rights reserved.
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