PSMN023-80LS,115 NXP Semiconductors, PSMN023-80LS,115 Datasheet - Page 7

• Manufacturer Part Number: PSMN023-80LS,115
• Description: MOSFET N-CH QFN3333
• Manufacturer: NXP Semiconductors

Specifications of PSMN023-80LS,115

• Input Capacitance (ciss) @ Vds: 1295pF @ 40V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 23 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 34A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 21nC @ 10V
• Power - Max: 65W
• Mounting Type: Surface Mount
• Package / Case: 8-VDFN Exposed Pad
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 23 mOhms
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 34 A
• Power Dissipation: 65 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5583-2

NXP Semiconductors
PSMN023-80LS
Product data sheet
Fig 9.
Fig 11. Sub-threshold drain current as a function of
(pF)
C
(A)
I
2000
1500
1000
10
10
10
10
10
10
D
500
−1
−2
−3
−4
−5
−6
0
function of gate-source voltage, typical values
gate-source voltage
f = 1 MHz; V
Input and reverse transfer capacitances as a
0
0
2
C
C
DS
iss
rss
2
= 0 V
4
min
typ
6
4
max
V
All information provided in this document is subject to legal disclaimers.
8
GS
003aae507
V
003aae487
GS
(V)
(V)
10
Rev. 2 — 18 August 2010
6
N-channel QFN3333 80 V 23 mΩ standard level MOSFET
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
2.4
1.8
1.2
0.6
5
4
3
2
1
0
3
0
-60
-60
junction temperature
factor as a function of junction temperature
0
0
PSMN023-80LS
max
min
typ
60
60
120
120
© NXP B.V. 2010. All rights reserved.
003aae514
T
003aae486
T
j
j
(°C)
( ° C)
180
180
7 of 14