PSMN023-80LS,115 NXP Semiconductors, PSMN023-80LS,115 Datasheet

no-image

PSMN023-80LS,115

Manufacturer Part Number
PSMN023-80LS,115
Description
MOSFET N-CH QFN3333
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN023-80LS115.pdf (14 pages)

Specifications of PSMN023-80LS,115

Input Capacitance (ciss) @ Vds
1295pF @ 40V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
23 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
80V
Current - Continuous Drain (id) @ 25° C
34A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
21nC @ 10V
Power - Max
65W
Mounting Type
Surface Mount
Package / Case
8-VDFN Exposed Pad
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
23 mOhms
Drain-source Breakdown Voltage
80 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
34 A
Power Dissipation
65 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-5583-2
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel MOSFET in QFN3333 package qualified to 150 °C. This product
is designed and qualified for use in a wide range of industrial, communications and power
supply equipment.
Table 1.
Symbol
V
I
P
T
Static characteristics
R
D
j
DS
tot
DSon
PSMN023-80LS
N-channel QFN3333 80 V 23 mΩ standard level MOSFET
Rev. 2 — 18 August 2010
High efficiency due to low switching
and conduction losses
Small footprint for compact designs
DC-to-DC converters
Lithium-ion battery protection
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
junction
temperature
drain-source
on-state
resistance
Conditions
T
T
see
T
V
T
V
T
j
mb
mb
j
j
GS
GS
≥ 25 °C; T
= 100 °C; see
= 25 °C; see
Figure 1
= 25 °C; V
= 25 °C; see
= 10 V; I
= 10 V; I
j
D
D
≤ 175 °C
GS
= 10 A;
= 10 A;
Figure 13
Figure 12
Figure 2
= 10 V;
Suitable for standard level gate drive
sources
Load switching
Min
-
-
-
-55
-
-
Product data sheet
Typ
-
-
-
-
-
19
Max Unit
80
34
65
150
38
23
V
A
W
°C
mΩ
mΩ

Related parts for PSMN023-80LS,115

Image
Part Number
Description
Manufacturer
Datasheet
Request R
PSMN023-80LS
Part Number:
PSMN023-80LS
Description:
MOSFET,N CH,80V,34A,QFN3333
Manufacturer:
NXP Semiconductors
Datasheet:
PSMN023-80LS115.pdf (14 pages)
LPC2420_60
Part Number:
LPC2420_60
Description:
NXP Semiconductors designed the LPC2420/2460 microcontroller around a 16-bit/32-bitARM7TDMI-S CPU core with real-time debug interfaces that include both JTAG andembedded trace
Manufacturer:
NXP Semiconductors
Datasheet:
LPC2420_60.pdf (86 pages)
LPC2458
Part Number:
LPC2458
Description:
NXP Semiconductors designed the LPC2458 microcontroller around a 16-bit/32-bitARM7TDMI-S CPU core with real-time debug interfaces that include both JTAG andembedded trace
Manufacturer:
NXP Semiconductors
Datasheet:
LPC2458.pdf (80 pages)
LPC2468
Part Number:
LPC2468
Description:
NXP Semiconductors designed the LPC2468 microcontroller around a 16-bit/32-bitARM7TDMI-S CPU core with real-time debug interfaces that include both JTAG andembedded trace
Manufacturer:
NXP Semiconductors
Datasheet:
LPC2468.pdf (85 pages)
LPC2470
Part Number:
LPC2470
Description:
NXP Semiconductors designed the LPC2470 microcontroller, powered by theARM7TDMI-S core, to be a highly integrated microcontroller for a wide range ofapplications that require advanced communications and high quality graphic displays
Manufacturer:
NXP Semiconductors
Datasheet:
LPC2470.pdf (91 pages)
LPC2478
Part Number:
LPC2478
Description:
NXP Semiconductors designed the LPC2478 microcontroller, powered by theARM7TDMI-S core, to be a highly integrated microcontroller for a wide range ofapplications that require advanced communications and high quality graphic displays
Manufacturer:
NXP Semiconductors
Datasheet:
LPC2478.pdf (93 pages)
XA-G30
Part Number:
XA-G30
Description:
The Philips Semiconductors XA (eXtended Architecture) family of 16-bit single-chip microcontrollers is powerful enough to easily handle the requirements of high performance embedded applications, yet inexpensive enough to compete in the market for hi
Manufacturer:
NXP Semiconductors
Datasheet:
XA-G30.pdf (36 pages)
XA-G37
Part Number:
XA-G37
Description:
The Philips Semiconductors XA (eXtended Architecture) family of 16-bit single-chip microcontrollers is powerful enough to easily handle the requirements of high performance embedded applications, yet inexpensive enough to compete in the market for hi
Manufacturer:
NXP Semiconductors
Datasheet:
XA-G37.pdf (37 pages)
XA-S3
Part Number:
XA-S3
Description:
The XA-S3 device is a member of Philips Semiconductors? XA(eXtended Architecture) family of high performance 16-bitsingle-chip microcontrollers
Manufacturer:
NXP Semiconductors
Datasheet:
XA-S3.pdf (52 pages)
LH75401_LH75411_N
Part Number:
LH75401_LH75411_N
Description:
The NXP BlueStreak LH75401/LH75411 family consists of two low-cost 16/32-bit System-on-Chip (SoC) devices
Manufacturer:
NXP Semiconductors
Datasheet:
LH75401_LH75411_N.pdf (63 pages)
LPC3130_3131
Part Number:
LPC3130_3131
Description:
The NXP LPC3130/3131 combine an 180 MHz ARM926EJ-S CPU core, high-speed USB2
Manufacturer:
NXP Semiconductors
Datasheet:
LPC3130_3131.pdf (68 pages)
LPC3141FET180
Part Number:
LPC3141FET180
Description:
The NXP LPC3141 combine a 270 MHz ARM926EJ-S CPU core, High-speed USB 2
Manufacturer:
NXP Semiconductors
LPC3143FET180
Part Number:
LPC3143FET180
Description:
The NXP LPC3143 combine a 270 MHz ARM926EJ-S CPU core, High-speed USB 2
Manufacturer:
NXP Semiconductors
LPC3152FET208
Part Number:
LPC3152FET208
Description:
The NXP LPC3152 combines an 180 MHz ARM926EJ-S CPU core, High-speed USB 2
Manufacturer:
NXP Semiconductors
LPC3154FET208
Part Number:
LPC3154FET208
Description:
The NXP LPC3154 combines an 180 MHz ARM926EJ-S CPU core, High-speed USB 2
Manufacturer:
NXP Semiconductors

PSMN023-80LS,115 Summary of contents

Page 1

... PSMN023-80LS N-channel QFN3333 mΩ standard level MOSFET Rev. 2 — 18 August 2010 1. Product profile 1.1 General description Standard level N-channel MOSFET in QFN3333 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment. ...

Page 2

... R GS Simplified outline Transparent top view SOT873-1 (QFN3333) Description plastic thermal enhanced very thin small outline package; no leads; 8 terminals All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 PSMN023-80LS Min = Figure 14 °C; - j(init) ≤ sup Graphic symbol ...

Page 3

... Ω; unclamped V sup GS 003aae497 120 P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of solder point temperature All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 PSMN023-80LS Min - = 20 kΩ -20 Figure 1 - Figure ° -55 - ° ...

Page 4

... Transient thermal impedance from junction to mounting base as a function of pulse duration; typical values PSMN023-80LS Product data sheet N-channel QFN3333 mΩ standard level MOSFET / Conditions see −4 − All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 PSMN023-80LS =10 μ 100 μ 100 (V) DS Min Typ Figure 4 - ...

Page 5

... D DS see Figure MHz °C; see Figure 1.33 Ω 4.7 Ω R G(ext) = 4.7 Ω G(ext) = 1.33 Ω 4.7 Ω R G(ext) All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 PSMN023-80LS Min Typ Max 4 100 - 10 100 - 39.9 48 ...

Page 6

... A; dI /dt = 100 A/µ 003aae500 (A) D Fig 6. 003aae502 R DSon (mΩ ° (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 PSMN023-80LS Min Typ - 0. 6.0 8.0 7.0 6 0 25° 300 µ Output characteristics: drain current as a function of drain-source voltage; typical values ...

Page 7

... N-channel QFN3333 mΩ standard level MOSFET 003aae507 (V) GS Fig 10. Gate-source threshold voltage as a function of 003aae487 typ max (V) GS Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 PSMN023-80LS 5 V GS(th) (V) 4 max 3 typ min - junction temperature 3 a 2.4 1 ...

Page 8

... V (V) = 5.0 GS 5.5 6.5 8.0 6 (A) D Fig 14. Gate charge waveform definitions 003aae505 (nC) G Fig 16. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 PSMN023-80LS GS(pl) V GS(th GS1 GS2 G(tot (pF) 3 ...

Page 9

... Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values PSMN023-80LS Product data sheet N-channel QFN3333 mΩ standard level MOSFET ( 175 ° 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 PSMN023-80LS 003aae508 = 25 ° 0.9 1.2 V (V) SD © NXP B.V. 2010. All rights reserved ...

Page 10

... 2.4 3.4 1.80 0.55 0.52 0.65 1.95 2.2 3.2 1.58 0.45 0.35 REFERENCES JEDEC JEITA - - - - - - All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 PSMN023-80LS detail 0.1 0.05 0.1 0.1 EUROPEAN PROJECTION SOT873 ISSUE DATE 10-03-10 19-04-10 © NXP B.V. 2010. All rights reserved. ...

Page 11

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN023-80LS v.2 20100818 • Modifications: Status changed from objective to product. PSMN023-80LS v.1 20100624 PSMN023-80LS Product data sheet N-channel QFN3333 mΩ standard level MOSFET Data sheet status Change notice Product data sheet ...

Page 12

... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 PSMN023-80LS © NXP B.V. 2010. All rights reserved ...

Page 13

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 PSMN023-80LS Trademarks © NXP B.V. 2010. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 18 August 2010 Document identifier: PSMN023-80LS ...

Related keywords