PSMN023-80LS,115 NXP Semiconductors, PSMN023-80LS,115 Datasheet - Page 5

• Manufacturer Part Number: PSMN023-80LS,115
• Description: MOSFET N-CH QFN3333
• Manufacturer: NXP Semiconductors

Specifications of PSMN023-80LS,115

• Input Capacitance (ciss) @ Vds: 1295pF @ 40V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 23 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 34A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 21nC @ 10V
• Power - Max: 65W
• Mounting Type: Surface Mount
• Package / Case: 8-VDFN Exposed Pad
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 23 mOhms
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 34 A
• Power Dissipation: 65 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5583-2

NXP Semiconductors
6. Characteristics
Table 6.
PSMN023-80LS
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
R
Dynamic characteristics
Q
Q
Q
Q
Q
V
C
C
C
t
t
t
t
DSS
GSS
d(on)
r
d(off)
f
(BR)DSS
GS(th)
GS(pl)
DSon
G
iss
oss
rss
G(tot)
GS
GS(th)
GS(th-pl)
GD
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
internal gate resistance
(AC)
total gate charge
gate-source charge
pre-threshold
gate-source charge
post-threshold
gate-source charge
gate-drain charge
gate-source plateau
voltage
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
Conditions
I
I
I
see
I
see
I
see
V
V
V
V
V
see
V
see
V
see
f = 1 MHz
I
see
I
see
I
see
V
T
V
R
V
V
R
All information provided in this document is subject to legal disclaimers.
D
D
D
D
D
D
D
D
j
DS
DS
GS
GS
GS
GS
GS
DS
DS
DS
DS
G(ext)
G(ext)
= 25 °C; see
= 250 µA; V
= 250 µA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 0 A; V
= 30 A; V
= 30 A; V
Figure 10
Figure 10
Figure
Figure 12
Figure 12
Figure 13
Figure 14
Figure
Figure 15
= 80 V; V
= 80 V; V
= 40 V; V
= 40 V; R
= 40 V; V
= 40 V; R
= -20 V; V
= 20 V; V
= 10 V; I
= 10 V; I
= 10 V; I
= 4.7 Ω
= 4.7 Ω
Rev. 2 — 18 August 2010
DS
10; see
14; see
DS
DS
DS
DS
DS
D
D
D
= 0 V; V
GS
GS
GS
GS
DS
L
L
GS
GS
DS
= 10 A; T
= 10 A; T
= 10 A; T
= 40 V; V
= 40 V; see
= V
= V
= V
Figure 16
= 1.33 Ω; V
= 1.33 Ω; V
N-channel QFN3333 80 V 23 mΩ standard level MOSFET
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; f = 1 MHz;
= 10 V; R
= 0 V; T
= 0 V; T
= 0 V; T
GS
GS
GS
Figure 11
Figure 15
; T
; T
; T
GS
j
j
j
j
j
j
GS
= 10 V;
j
j
j
= 175 °C;
= -55 °C;
= 25 °C;
= 150 °C;
= 100 °C;
= 25 °C;
j
j
j
= 25 °C
= 125 °C
= 25 °C
G(ext)
= -55 °C
= 25 °C
= 25 °C
Figure
GS
GS
= 10 V;
= 10 V;
= 10 V;
= 4.7 Ω
14;
PSMN023-80LS
Min
73
80
1
-
2.3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
3
0.1
-
10
10
39.9
-
19
1
18.4
21
6.6
3.9
2.7
4.8
5
1295
125
69
10.5
8
20.5
5.4
© NXP B.V. 2010. All rights reserved.
Max
-
-
-
4.7
4
2
50
100
100
48.3
38
23
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
Ω
nC
nC
nC
nC
nC
nC
V
pF
pF
pF
ns
ns
ns
ns
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