FB180SA10P Vishay, FB180SA10P Datasheet - Page 6

• Manufacturer Part Number: FB180SA10P
• Description: MOSFET Power N-Chan 100V 180 Amp
• Manufacturer: Vishay

Specifications of FB180SA10P

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Source
• Resistance Drain-source Rds (on): 0.0065 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 180 A
• Power Dissipation: 480000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-227
• Continuous Drain Current Id: 180A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 6.5mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

FB180SA10P
Vishay Semiconductors
www.vishay.com
6
[e-mail], [e-mail],
For technical questions within your region, please contact one of the following:
Re-Applied
Voltage
Reverse
Recovery
Current
*
1
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
GS
Fig. 13c - Peak Diode Recovery dV/dt Test Circuit
12 V
+
2
-
R
= 5V for Logic Level Devices
P.W.
D.U.T.
G
SD
V
DS
Fig. 14 - For N-Channel Power MOSFETs
GS
Waveform
Waveform
Same type as D.U.T.
Power MOSFET, 180 A
Fig. 13b - Gate Charge Test Circuit
Current regulator
0.2 µF
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
3 mA
50 kΩ
Current sampling resistors
Diode Recovery
Current
3
0.3 µF
+
-
• dV/dt controlled by R
• Driver same type as D.U.T.
• I
• D.U.T. - Device under test
dv/dt
Forward Drop
I
SD
G
controlled by duty factor "D"
di/dt
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
D.U.T.
current transformer
D =
I
D
Period
P.W.
-
G
+
-
[e-mail]
V
4
DS
+
V
V
I
SD
GS
DD
=10V
+
*
-
V
DD
Document Number: 94541
Revision: 30-Jul-10