FB180SA10P Vishay, FB180SA10P Datasheet - Page 2

• Manufacturer Part Number: FB180SA10P
• Description: MOSFET Power N-Chan 100V 180 Amp
• Manufacturer: Vishay

Specifications of FB180SA10P

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Source
• Resistance Drain-source Rds (on): 0.0065 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 180 A
• Power Dissipation: 480000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-227
• Continuous Drain Current Id: 180A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 6.5mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

FB180SA10P
Vishay Semiconductors
Note
(1)
Notes
(1)
(2)
www.vishay.com
2
THERMAL RESISTANCE
PARAMETER
Junction to case
Case to sink, flat, greased surface
ELECTRICAL CHARACTERISTICS (T
PARAMETER
Drain to source breakdown voltage
Breakdown voltage temperature
coefficient
Static drain to source on-resistance
Gate threshold voltage
Forward transconductance
Drain to source leakage current
Gate to source forward leakage
Total gate charge
Gate to source charge
Gate to drain ("Miller") charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Internal source inductance
Input capacitance
Output capacitance
Reverse transfer capacitance
SOURCE-DRAIN RATINGS AND CHARACTERISTICS
PARAMETER
Continuous source current
(body diode)
Pulsed source current (body diode)
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Forward turn-on time
Pulse width  300 μs, duty cycle  2 %
Repetitive rating; pulse width limited by maximum junction temperature (see fig. 8)
Pulse width  300 μs, duty cycle  2 %
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For technical questions within your region, please contact one of the following:
V
SYMBOL
SYMBOL
R
SYMBOL
V(
(BR)DSS
DS(on)
V
V
I
SM
R
R
t
t
C
t
BR)DSS
I
I
Q
C
C
GS(th)
Q
SD
d(on)
d(off)
rr
Q
g
DSS
GSS
Q
t
L
I
thJC
thCS
t
on
t
oss
rss
S
gd
iss
fs
gs
r
f
S
(2)
rr
g
Power MOSFET, 180 A
J
(1)
(2)
= 25 °C unless otherwise noted)
/T
(1)
J
MOSFET symbol
showing the integral
reverse p-n junction diode.
T
T
Intrinsic turn-on time is negligible (turn-on is dominated by L
V
Reference to 25 °C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead, and center of die contact
V
V
f = 1.0 MHz, see fig. 5
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
g
D
= 180 A
= 180 A
= 25 °C, I
= 25 °C, I
= 2.0(internal)
= 0.27, see fig. 10
= 0 V, I
= 10 V, I
= V
= 25 V, I
= 100 V, V
= 80 V, V
= 20 V
= - 20 V
= 80 V
= 10.0 V; see fig. 6 and 13
= 50 V
= 0 V
= 25 V
GS
TEST CONDITIONS
TEST CONDITIONS
, I
TYP.
0.05
D
D
S
D
D
F
-
= 250 μA
GS
= 250 μA
= 180 A, V
= 180 A
= 180 A; dI/dt = 100 A/μs
= 180 A
GS
= 0 V, T
= 0 V
D
[e-mail]
= 1 mA
J
(1)
GS
= 125 °C
= 0 V
G
(1)
D
S
MAX.
0.26
-
MIN.
MIN.
100
2.0
93
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.0065
10 700
0.093
TYP.
2800
1300
Document Number: 94541
TYP.
250
110
351
181
335
300
5.0
2.6
40
45
-
-
-
-
-
-
-
-
-
-
Revision: 30-Jul-10
S
MAX.
MAX.
- 200
+ L
500
200
380
165
180
720
450
4.0
1.3
3.9
50
60
UNITS
-
-
-
-
-
-
-
-
-
-
-
-
°C/W
D
)
UNITS
UNITS
V/°C
μA
nA
nC
nH
μC
ns
pF
ns

V
V
S
A
V