FB180SA10P Vishay, FB180SA10P Datasheet - Page 6
![MOSFET Power N-Chan 100V 180 Amp](/photos/22/16/221692/4076182_sml.jpg)
FB180SA10P
Manufacturer Part Number
FB180SA10P
Description
MOSFET Power N-Chan 100V 180 Amp
Manufacturer
Vishay
Datasheet
1.FB180SA10P.pdf
(8 pages)
Specifications of FB180SA10P
Transistor Polarity
N-Channel
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Source
Resistance Drain-source Rds (on)
0.0065 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
180 A
Power Dissipation
480000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-227
Continuous Drain Current Id
180A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
6.5mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FB180SA10P
Manufacturer:
VISHAY
Quantity:
340
Part Number:
FB180SA10P
Manufacturer:
VISHAY/威世
Quantity:
20 000
FB180SA10P
Vishay Semiconductors
www.vishay.com
6
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
For technical questions within your region, please contact one of the following:
Re-Applied
Voltage
Reverse
Recovery
Current
*
1
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
GS
Fig. 13c - Peak Diode Recovery dV/dt Test Circuit
12 V
+
2
-
R
= 5V for Logic Level Devices
P.W.
D.U.T.
G
SD
V
DS
Fig. 14 - For N-Channel Power MOSFETs
GS
Waveform
Waveform
Same type as D.U.T.
Power MOSFET, 180 A
Fig. 13b - Gate Charge Test Circuit
Current regulator
0.2 µF
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
3 mA
50 kΩ
Current sampling resistors
Diode Recovery
Current
3
0.3 µF
+
-
• dV/dt controlled by R
• Driver same type as D.U.T.
• I
• D.U.T. - Device under test
dv/dt
Forward Drop
I
SD
G
controlled by duty factor "D"
di/dt
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
D.U.T.
current transformer
D =
I
D
Period
P.W.
-
G
+
-
DiodesEurope@vishay.com
V
4
DS
+
V
V
I
SD
GS
DD
=10V
+
*
-
V
DD
Document Number: 94541
Revision: 30-Jul-10