SUP75N06-08-E3 Vishay, SUP75N06-08-E3 Datasheet - Page 4

• Manufacturer Part Number: SUP75N06-08-E3
• Description: MOSFET Power 60V 75A 250W
• Manufacturer: Vishay

Specifications of SUP75N06-08-E3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.008 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 3700 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Continuous Drain Current Id: 75A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 8mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

www.vishay.com S FaxBack 408-970-5600
2-4
SUP/SUB75N06-08
Vishay Siliconix
0.01
0.1
100
2
1
2.5
2.0
1.5
1.0
0.5
0.0
80
60
40
20
10
0
–50
0.2
0.1
0.05
0.02
–5
0
Duty Cycle = 0.5
On-Resistance vs. Junction Temperature
Maximum Avalanche and Drain Current
V
I
–25
D
GS
25
= 30 A
= 10 V
T
0
J
T
Single Pulse
vs. Case Temperature
50
C
– Junction Temperature (_C)
– Case Temperature (_C)
25
10
75
–4
50
75
100
Normalized Thermal Transient Impedance, Junction-to-Case
100
125
125
10
_
150
–3
150
Square Wave Pulse Duration (sec)
175
175
10
–2
500
100
10
1
0.1
100
Limited
by r
10
1
DS(on)
V
DS
T
Single Pulse
10
Source-Drain Diode Forward Voltage
C
– Drain-to-Source Voltage (V)
Safe Operating Area
–1
T
= 25_C
1
J
0.3
V
= 150_C
SD
– Source-to-Drain Voltage (V)
0.6
10
S-05111—Rev. F, 10-Dec-01
Document Number: 70283
T
0.9
1
J
= 25_C
1.2
10 ms
100 as
1 ms
10 ms
100 ms
dc
3
100
1.5