SUP75N06-07L-E3 Vishay/Siliconix, SUP75N06-07L-E3 Datasheet

SUP75N06-07L-E3

Manufacturer Part Number

SUP75N06-07L-E3

Description

MOSFET 60V 75A 250W

Manufacturer

Vishay/Siliconix

Datasheet

1.SUP75N06-07L-E3.pdf (5 pages)

Specifications of SUP75N06-07L-E3

Product Category

MOSFET

Rohs

yes

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

60 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

75 A

Resistance Drain-source Rds (on)

7.5 mOhms

Configuration

Single

Maximum Operating Temperature

+ 175 C

Mounting Style

Through Hole

Package / Case

TO-220AB-3

Fall Time

50 ns

Minimum Operating Temperature

- 55 C

Power Dissipation

250 W

Rise Time

15 ns

Factory Pack Quantity

100

Typical Turn-off Delay Time

150 ns

Current page: 1 of 5
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Notes:

a. Package limited.

b. Duty cycle ≤ 1 %.

c. See SOA curve for voltage derating.

d. When Mounted on 1" square PCB (FR-4 material).

* Pb containing terminations are not RoHS compliant, exemptions may apply.

Document Number: 70776

S-71359-Rev. G, 09-Jul-07

PRODUCT SUMMARY

ABSOLUTE MAXIMUM RATINGS T

Parameter

Gate-Source Voltage

Continuous Drain Current (T

Pulsed Drain Current

Avalanche Current

Single Pulse Avalanche Energy

Power Dissipation

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

Parameter

Junction-to-Ambient

Junction-to-Case

(BR)DSS

Ordering Information: SUB75N06-07L (TO-263)

SUP75N06-07L

TO-220AB

Top View

G D S

(V)

DRAIN connected to TAB

0.0085 at V

0.0075 at V

SUB75N06-07L-E3 (TO-263, Lead (Pb)-free)

SUP75N06-07L (TO-263)

SUP75N06-07L-E3 (TO-263, Lead (Pb)-free)

DS(on)

N-Channel 60-V (D-S) 175 °C MOSFET

= 175 °C)

(Ω)

= 4.5 V

= 10 V

SUB75N06-07L

= 25 °C (TO-220AB and TO-263)

TO-263

Top View

PCB Mount (TO-263)

Free Air (TO-220AB)

= 25 °C (TO-263)

L = 0.1 mH

= 25 °C, unless otherwise noted

(A)

= 125 °C

= 25 °C

FEATURES

• 175 °C Rated Maximum Junction Temperature

Symbol

N-Channel MOSFET

, T

thJA

thJC

stg

SUP/SUB75N06-07L

- 55 to 175

Limit

250

± 20

62.5

240

280

3.7

0.6

Vishay Siliconix

www.vishay.com

°C/W

Unit

RoHS*

COMPLIANT

°C

Available

Related parts for SUP75N06-07L-E3

SUP75N06-07L-E3 Summary of contents

Page 1

... V GS TO-220AB DRAIN connected to TAB Top View SUP75N06-07L Ordering Information: SUB75N06-07L (TO-263) SUB75N06-07L-E3 (TO-263, Lead (Pb)-free) SUP75N06-07L (TO-263) SUP75N06-07L-E3 (TO-263, Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Gate-Source Voltage Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Avalanche Current b Single Pulse Avalanche Energy ...

Page 2

SUP/SUB75N06-07L Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic ...

Page 3

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 250 thru 200 150 100 Drain-to-Source Voltage (V) DS Output Characteristics 180 150 120 ...

Page 4

SUP/SUB75N06-07L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1.9 1.6 1.3 1.0 0.7 0 Junction Temperature (°C) J ...

Page 5

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description ...

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