SUP75N06-08-E3 Vishay, SUP75N06-08-E3 Datasheet - Page 3

• Manufacturer Part Number: SUP75N06-08-E3
• Description: MOSFET Power 60V 75A 250W
• Manufacturer: Vishay

Specifications of SUP75N06-08-E3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.008 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 3700 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Continuous Drain Current Id: 75A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 8mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Document Number: 70283
S-05111—Rev. F, 10-Dec-01
V
GS
7000
6000
5000
4000
3000
2000
1000
250
200
150
100
120
100
50
80
60
40
20
= 10, 9, 8 V
0
0
0
0
0
0
C
rss
10
20
2
V
V
V
DS
DS
GS
Output Characteristics
– Drain-to-Source Voltage (V)
– Drain-to-Source Voltage (V)
T
– Gate-to-Source Voltage (V)
Transconductance
7 V
C
20
= –55_C
Capacitance
40
4
C
30
oss
60
6
40
C
80
8
6 V
5 V
4 V
iss
25_C
50
125_C
_
100
10
60
0.010
0.008
0.006
0.004
0.002
0.000
200
150
100
50
20
16
12
0
8
4
0
0
0
0
V
I
D
DS
= 75 A
25
1
On-Resistance vs. Drain Current
20
= 30 V
V
V
GS
GS
Q
Transfer Characteristics
SUP/SUB75N06-08
= 10 V
50
g
2
– Gate-to-Source Voltage (V)
I
D
– Total Gate Charge (nC)
40
25_C
– Drain Current (A)
Gate Charge
T
C
75
3
V
= 125_C
Vishay Siliconix
GS
60
= 20 V
100
4
80
125
5
www.vishay.com
–55_C
100
150
6
175
120
2-3
7