SUP75N06-12L-E3 Vishay/Siliconix, SUP75N06-12L-E3 Datasheet

SUP75N06-12L-E3

Manufacturer Part Number

SUP75N06-12L-E3

Description

MOSFET 60V 75A 142W

Manufacturer

Vishay/Siliconix

Datasheet

1.SUP75N06-12L-E3.pdf (5 pages)

Specifications of SUP75N06-12L-E3

Product Category

MOSFET

Rohs

yes

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

60 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

75 A

Resistance Drain-source Rds (on)

12 mOhms

Configuration

Single

Maximum Operating Temperature

+ 175 C

Mounting Style

Through Hole

Package / Case

TO-220AB-3

Fall Time

20 ns

Minimum Operating Temperature

- 55 C

Power Dissipation

142 W

Rise Time

8 ns

Factory Pack Quantity

100

Tradename

TrenchFET

Typical Turn-off Delay Time

77 ns

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

SUP75N06-12L-E3

Manufacturer:

VISHAY/威世

Quantity:

20 000

Current page: 1 of 5
Download datasheet (83Kb)

Notes:

Document Number: 70807

S-59182—Rev. B, 07-Sep-98

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Pulsed Drain Current

Avalanche Current

Repetitive Avalanche Energy

Power Dissipation

Operating Junction and Storage Temperature Range

Junction-to-Ambient

Junction-to-Case

Duty cycle

See SOA curve for voltage derating.

When mounted on 1” square PCB (FR-4 material).

(BR)DSS

SUP75N06-12L

TO-220AB

(V)

Top View

1%.

G D S

0.014 @ V

0.012 @ V

= 175 C)

N-Channel 60-V (D-S), 175 C MOSFET

DS(on)

DRAIN connected to TAB

Parameter

( )

= 4.5 V

= 10 V

= 25 C (TO-220AB and TO-263)

PCB Mount (TO-263)

Free Air (TO-220AB)

= 25 C (TO-263)

L = 0.1 mH

= 100 C

= 25 C

SUB75N06-12L

(A)

Top View

TO-263

Symbol

thJA

thJC

, T

stg

SUP/SUB75N06-12L

N-Channel MOSFET

www.vishay.com FaxBack 408-970-5600

–55 to 175

Limit

3.75

142

62.5

1.05

180

Vishay Siliconix

Unit

C/W

2-1

Related parts for SUP75N06-12L-E3

SUP75N06-12L-E3 Summary of contents

Page 1

... DS(on) 0.012 @ 0.014 @ TO-220AB DRAIN connected to TAB Top View SUP75N06-12L Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T Continuous Drain Current (T = 175 C) = 175 Pulsed Drain Current Avalanche Current a Repetitive Avalanche Energy T C Power Dissipation ...

Page 2

SUP/SUB75N06-12L Vishay Siliconix Parameter Symbol Static Drain-Source Breakdown Voltage V (BR)DSS Gate Threshold Voltage V Gate-Body Leakage I Zero Gate Voltage Drain Current On-State Drain Current ...

Page 3

Output Characteristics 200 thru 160 120 – Drain-to-Source Voltage (V) DS Transconductance 100 ...

Page 4

SUP/SUB75N06-12L Vishay Siliconix On-Resistance vs. Junction Temperature 2 1.5 1.0 0.5 0 –50 – 100 T – Junction Temperature ( C) J Maximum Drain Current vs. ...

Page 5

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description ...

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