SIHP12N50C-E3 Vishay, SIHP12N50C-E3 Datasheet - Page 5

• Manufacturer Part Number: SIHP12N50C-E3
• Description: MOSFET Power N-Channel 500V
• Manufacturer: Vishay

Specifications of SIHP12N50C-E3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.46 Ohms
• Forward Transconductance Gfs (max / Min): 3 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: 500 V
• Continuous Drain Current: 12 A
• Power Dissipation: 208 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 0.46ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 30V
• Operating Temperature Range: -55°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Document Number: 91388
S10-0969-Rev. B, 26-Apr-10
Fig. 10a - Switching Time Test Circuit
0.001
0.001
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
0.1
G
0.1
1
10 V
V
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case (TO-220AB, D
1
Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction-to-Case (TO-220 FULLPAK)
10
10
GS
-4
-4
0.1
0.02
0.05
0.02
0.5
0.1
V
0.2
0.05
0.5
DS
Single Pulse
(Thermal Response)
Single Pulse
(Thermal Response)
D.U.T.
R
D
10
-3
10
-3
+
-
V
DD
SiHP12N50C, SiHB12N50C, SiHF12N50C
t
1
t
1
, Rectangular Pulse Duration (s)
, Rectangular Pulse Duration (s)
10
-2
10
-2
0.1
90 %
10 %
V
V
DS
GS
Fig. 10b - Switching Time Waveforms
t
d(on)
0.1
Notes:
1. Duty Factor, D = t
2. Peak T
Notes:
1. Duty Factor, D = t
2. Peak T
t
r
1
j
j
= P
P
= P
P
DM
DM
DM
DM
x Z
x Z
Vishay Siliconix
t
1
t
1
thJC
1
1
thJC
/t
/t
2
t
2
2
d(off)
t
PAK)
+ T
t
2
+ T
2
C
C
t
10
1
f
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