SIHP12N50C-E3 Vishay, SIHP12N50C-E3 Datasheet - Page 3

• Manufacturer Part Number: SIHP12N50C-E3
• Description: MOSFET Power N-Channel 500V
• Manufacturer: Vishay

Specifications of SIHP12N50C-E3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.46 Ohms
• Forward Transconductance Gfs (max / Min): 3 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: 500 V
• Continuous Drain Current: 12 A
• Power Dissipation: 208 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 0.46ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 30V
• Operating Temperature Range: -55°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 91388
S10-0969-Rev. B, 26-Apr-10
18
15
12
30
25
20
15
10
5
0
Fig. 1 - Typical Output Characteristics (TO-220)
Fig. 2 - Typical Output Characteristics (TO-220)
9
6
3
0
0
0
TOP
BOTTOM 5.0 V
TOP
BOTTOM 5.0 V
V
V
DS
5
5
DS
14 V
13 V
12 V
11 V
10 V
9.0 V
8.0 V
7.0 V
6.0 V
15 V
V
GS
14 V
13 V
12 V
11 V
10 V
9.0 V
8.0 V
7.0 V
6.0 V
, Drain-to-Source Voltage (V)
15 V
V
, Drain-to-Source Voltage (V)
GS
10
10
T
J
= 25 °C
T
J
15
15
= 150 °C
7.0 V
7.0 V
20
20
25
25
SiHP12N50C, SiHB12N50C, SiHF12N50C
30
30
Fig. 4 - Normalized On-Resistance vs. Temperature
2.5
1.5
0.5
35
30
25
20
15
10
5
0
3
2
1
0
- 60 - 40 - 20
0
Fig. 3 - Typical Transfer Characteristics
I
D
= 12 A
V
GS
5
T
J
, Gate-to-Source Voltage (V)
, Junction Temperature (°C)
0
20 40 60 80 100 120 140 160
10
Vishay Siliconix
15
T
T
J
J
= 150 °C
V
= 25 °C
20
www.vishay.com
GS
= 10 V
25
3