SIHP12N50C-E3 Vishay, SIHP12N50C-E3 Datasheet - Page 4

• Manufacturer Part Number: SIHP12N50C-E3
• Description: MOSFET Power N-Channel 500V
• Manufacturer: Vishay

Specifications of SIHP12N50C-E3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.46 Ohms
• Forward Transconductance Gfs (max / Min): 3 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: 500 V
• Continuous Drain Current: 12 A
• Power Dissipation: 208 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 0.46ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 30V
• Operating Temperature Range: -55°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

SiHP12N50C, SiHB12N50C, SiHF12N50C
Vishay Siliconix
www.vishay.com
4
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
2400
1200
2000
1600
800
400
20
16
12
24
0
8
4
0
1
0
C
I
D
rss
= 12 A
V
10
DS
Q
, Drain-to-Source Voltage (V)
G
, Total Gate Charge (nC)
10
20
V
C
C
C
GS
iss
rss
oss
C
oss
= 0 V, f = 1MHz
= C
= C
= C
30
gs
ds
gd
+C
+ C
Fig. 9 - Maximum Safe Operating Area (TO-220 FULLPAK)
V
V
V
DS
DS
DS
gd
gd
100
= 400 V
= 250 V
C
= 100 V
40
ds
C
iss
SHORTED
100
0.1
10
1
50
10
T
T
Single Pulse
C
J
1000
= 150 °C
= 25 °C
60
OPERATION IN THIS AREA
V
DS
LIMITED BY R
, Drain-to-Source Voltage (V)
100
DS(on)
Fig. 8 - Maximum Safe Operating Area (TO-220AB, D
Fig. 7 - Typical Source-Drain Diode Forward Voltage
100
100
0.1
10
0.1
10
1
1
10
0.2
10 ms
T
T
Single Pulse
100 µs
1 ms
C
J
= 150 °C
= 25 °C
1000
OPERATION IN THIS AREA
V
0.4
V
SD
DS
, Source-to-Drain Voltage (V)
LIMITED BY R
, Drain-to-Source Voltage (V)
0.6
T
J
= 150 °C
0.8
100
DS(on)
S10-0969-Rev. B, 26-Apr-10
Document Number: 91388
1
T
J
= 25 °C
1.2
V
GS
= 0 V
1.4
10 ms
100 µs
1 ms
1000
2
1.6
PAK)