SIHP12N50C-E3 Vishay, SIHP12N50C-E3 Datasheet - Page 2

• Manufacturer Part Number: SIHP12N50C-E3
• Description: MOSFET Power N-Channel 500V
• Manufacturer: Vishay

Specifications of SIHP12N50C-E3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.46 Ohms
• Forward Transconductance Gfs (max / Min): 3 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: 500 V
• Continuous Drain Current: 12 A
• Power Dissipation: 208 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 0.46ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 30V
• Operating Temperature Range: -55°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

SiHP12N50C, SiHB12N50C, SiHF12N50C
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Note
• The information shown here is a preliminary product proposal, not a commercial product data sheet. Vishay Siliconix is not committed to
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
Junction-to-Ambient (PCB mount)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Input Resistance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Current
produce this or any similar product. This information should not be used for design purposes, nor construed as an offer to furnish or sell
such products.
DS
Temperature Coefficient
J
= 25 °C, unless otherwise noted)
a
SYMBOL
SYMBOL
ΔV
R
V
R
R
R
t
t
C
I
I
I
C
V
DS(on)
C
Q
Q
V
GS(th)
d(on)
d(off)
I
RRM
GSS
DSS
Q
DS
g
Q
R
thJA
thJC
thJA
SM
t
I
t
t
DS
oss
SD
iss
rss
S
rr
fs
gs
gd
r
f
g
rr
g
/T
J
TO220-AB D
MOSFET symbol
showing the
integral reverse
p - n junction diode
V
V
V
T
GS
GS
DS
J
T
Reference to 25 °C, I
= 25 °C, I
J
= 10 V
= 10 V
= 400 V, V
= 25 °C, I
V
V
R
V
V
f = 1 MHz, open drain
TEST CONDITIONS
DS
DS
V
GS
DD
g
DS
0.6
= 4.3 Ω, V
62
40
2
= V
= 500 V, V
PAK (TO-263)
= 0 V, I
= 250 V, I
V
f = 1.0 MHz
V
= 50 V, I
F
GS
V
V
DS
= I
GS
GS
S
R
GS
= ± 30 V
= 10 A, V
= 20 V
I
, I
= 25 V,
S
D
= 0 V,
, dI/dt = 100 A/μs,
= 0 V, T
D
D
= 10 A, V
GS
= 250 μA
= 250 μA
D
D
GS
= 3 A
= 10 A
= 10 V
I
D
= 0 V
D
J
GS
= 1 mA
= 4 A
= 125 °C
G
DS
= 0 V
= 400 V
TO-220 FULLPAK
D
S
3.5
65
-
MIN.
500
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S10-0969-Rev. B, 26-Apr-10
Document Number: 91388
TYP.
1375
0.46
165
580
0.6
1.1
4.3
17
32
12
15
18
35
23
13
3
6
-
-
-
-
-
-
-
-
MAX.
± 100
0.555
250
5.0
1.8
50
48
12
28
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
UNIT
V/°C
nC
μC
nA
μA
pF
ns
ns
Ω
Ω
V
V
S
A
V
A