BGB 717L7ESD E6327 Infineon Technologies, BGB 717L7ESD E6327 Datasheet - Page 8

• Manufacturer Part Number: BGB 717L7ESD E6327
• Description: RF Bipolar Small Signal RF BIP TRANSISTORS
• Manufacturer: Infineon Technologies

Specifications of BGB 717L7ESD E6327

• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 150 C
• Package / Case: TSLP-7-1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BGB717L7ESDE6327XT

2
The BGB717L7ESD is an advanced low noise amplifier MMIC with integrated ESD protection and active biasing
specifically designed for FM antenna systems requiring high gain, reduced power consumption and very low
distortion. The external components determine the gain of the FM amplifier and can also be modified to extend
the operating frequency.
The device is based upon Infineon Technologies cost effective SiGe:C technology and comes in a low profile
TSLP-7-1 leadless green package.
Figure 1
Table 1
Pin
1
2
3
4
5
6
7
Data Sheet
Product Brief
Pinning of BGB717L7ESD
Pinning Table
Function
GND
RF-In
Bias-Out
Ctrl On/Off
RF-Out
V
GND
CC
1
2
8
6
3
5
7
4
Revision 3.3, 2010-06-24
BGB717L7ESD
Product Brief