BGB 717L7ESD E6327 Infineon Technologies, BGB 717L7ESD E6327 Datasheet - Page 7

• Manufacturer Part Number: BGB 717L7ESD E6327
• Description: RF Bipolar Small Signal RF BIP TRANSISTORS
• Manufacturer: Infineon Technologies

Specifications of BGB 717L7ESD E6327

• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 150 C
• Package / Case: TSLP-7-1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BGB717L7ESDE6327XT

SiGe:C Low Noise Amplifier MMIC for FM Radio
Applications
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Main features:
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Product Name
BGB717L7ESD
Data Sheet
High performance FM radio LNA with integrated biasing
Worldwide FM band support (76 MHz to 108 MHz)
Integrated ESD protection for all pins (3 kV for RF input vs. GND, 2 kV
for all other pin combinations, HBM)
Very high gain at low current consumption
High input compression point
High input impedance
Excellent noise figure from latest SiGe:C technology
Integrated active biasing circuit enables stable operation point against
temperature- and processing-variations
Minimum external components
Operation voltage: 1.8 V to 4.0 V
Power-off function
Very small and leadless package TSLP-7-1, 2.0 x 1.3 x 0.4 mm
Pb-free (RoHS compliant) and halogen-free (WEEE compliant) package
Active FM antenna systems
Portable FM radio
Personal headphone radio
ISM applications
Features
Package
TSLP-7-1
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Marking
AX
Revision 3.3, 2010-06-24
BGB717L7ESD