GA75TS60U Vishay, GA75TS60U Datasheet - Page 5

• Manufacturer Part Number: GA75TS60U
• Description: IGBT FAST 600V 75A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA75TS60U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 75A
• Current - Collector (ic) (max): 75A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 7.88nF @ 30V
• Power - Max: 285W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)
• Channel Type: N
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 75A
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Not Compliant

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Fig. 9 - Typical Switching Losses vs. Gate
14000
12000
10000
8000
6000
4000
2000
10
9
8
7
6
5
0
0
Fig. 7 - Typical Capacitance vs.

V
V
T
1
I
J
C
CC
GE
Collector-to-Emitter Voltage
= 360V
= 15V
= 25 C
= 75A
125°C
V
R
10
CE
G
R
°
G1

V
C
C
C
, Gate Resistance (Ohm)
, Collector-to-Emitter Voltage (V)
Resistance
GE
ies
res
oes

C
C
C
, Gate Resistance
ies

oes

res
=
=
=
=
20
0V,
C
C
C
ge
gc
ce
+ C
+ C
10
f = 1MHz
gc ,
gc
30
C
(
ce
SHORTED
40
100
50
100
20
16
12
10
Fig. 10 - Typical Switching Losses vs.
8
4
0
1
-60 -40 -20
0


V
R
R
V
V
I
Fig. 8 - Typical Gate Charge vs.
CC
C
GE
CC
G1
G
=27 ;R
= 400V
= 75A
= 15V
= 360V
= Ohm
Gate-to-Emitter Voltage
Junction Temperature
T , Junction Temperature ( C )
Q , Total Gate Charge (nC)
J
100
G
G2
0
GA75TS60U
= 0
20
40
200
60
80 100 120 140 160
300

I =

I =

I =
C
C
C
°
37.5
150
75
A
A
A
5
400