GA75TS60U Vishay, GA75TS60U Datasheet - Page 4

• Manufacturer Part Number: GA75TS60U
• Description: IGBT FAST 600V 75A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA75TS60U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 75A
• Current - Collector (ic) (max): 75A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 7.88nF @ 30V
• Power - Max: 285W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)
• Channel Type: N
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 75A
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Not Compliant

GA75TS60U
Fig. 4 - Maximum Collector Current vs. Case
4
80
60
40
20
0 . 0 1
0
0 . 1
25
0 . 0 0 0 1
1
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0 .5 0
50
T , Case Temperature (
C
0 .2 0
0 .0 2
0.1 0
0.0 5
0 .0 1
Temperature
0 . 0 0 1
75
(Th e rm a l R e s is ta n c e )
S in g le P u ls e
100
t , R ec ta n g ular Pu ls e D u ratio n (S e co n d s )
0 . 0 1
1
°
125
C)
150
0 . 1
Fig. 5 - Typical Collector-to-Emitter Voltage
3.0
2.0
1.0
-60 -40 -20

1
V
80 us PULSE WIDTH
GE
vs. Junction Temperature
Notes:
1. Duty factor D = t
2. Peak T = P
= 15V
T
T , Junction Temperature ( C)
J
J
, Junction Temperature (°C)
0
J
1 0
20
DM
40
x Z
1
/ t
thJC
60
2
P
DM
+ T
80 100 120 140 160
C
1 0 0
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I =

I =

I =
t
C
C
C
1
t 2
37.5
150
37.5A
75
°
A
A
A
1 0 0 0