GA75TS60U Vishay, GA75TS60U Datasheet

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GA75TS60U

Manufacturer Part Number
GA75TS60U
Description
IGBT FAST 600V 75A INT-A-PAK
Manufacturer
Vishay
Datasheet

Specifications of GA75TS60U

Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.2V @ 15V, 75A
Current - Collector (ic) (max)
75A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
7.88nF @ 30V
Power - Max
285W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
INT-A-PAK (3 + 4)
Channel Type
N
Collector-emitter Voltage
600V
Collector Current (dc) (max)
75A
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant, Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
GA75TS60U
Manufacturer:
IR
Quantity:
27
Part Number:
GA75TS60U
Manufacturer:
EMERSON
Quantity:
530
Part Number:
GA75TS60U
Quantity:
55
• Generation 4 IGBT technology
• UltraFast: Optimized for high operating
• Very low conduction and switching losses
• HEXFRED
• Industry standard package
• UL approved
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
• Lower EMI, requires less snubbing
Absolute Maximum Ratings
"HALF-BRIDGE" IGBT INT-A-PAK
Benefits
Features
Features
Features
Features
Features
Thermal / Mechanical Characteristics
V
I
I
I
I
V
V
P
P
T
T
R
R
R
www.irf.com
SMPS, Welding
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
recovery
C
CM
LM
FM
STG
CES
GE
ISOL
D
D
J
@ T
JC
CS
JC
@ T
@ T
C
C
C
= 25°C
= 25°C
= 85°C
antiparallel diodes with ultra- soft
Collector-to-Emitter Voltage
Continuous Collector Current
Pulsed Collector Current•
Peak Switching Current‚
Peak Diode Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal To Case, t = 1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction-to-Case - IGBT
Thermal Resistance, Junction-to-Case - Diode
Thermal Resistance, Case-to-Sink - Module
Mounting Torque, Case-to-Heatsink
Mounting Torque, Case-to-Terminal 1, 2 & 3
Weight of Module
Parameter
Parameter
S
T
GA75TS60U
Ultra-Fast
-40 to +150
-40 to +125
Max.
2500
±20
600
150
150
150
285
150
75
Typ.
200
0.1
@V
V
GE
V
CE
TM
CES
(on) typ.
=
Speed IGBT
15V
Max.
0.44
0.70
=
6.0
5.0
PD -50050D
,
600
I
= 1.7V
C
=
V
05/20/02
Units
75A
Units
°C/W
N m
°C
W
V
A
V
g
.
1

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GA75TS60U Summary of contents

Page 1

... Thermal / Mechanical Characteristics Parameter R Thermal Resistance, Junction-to-Case - IGBT JC R Thermal Resistance, Junction-to-Case - Diode JC R Thermal Resistance, Case-to-Sink - Module CS Mounting Torque, Case-to-Heatsink Mounting Torque, Case-to-Terminal 1, 2 & 3 Weight of Module www.irf.com GA75TS60U Ultra-Fast V @V Max. 600 75 150 150 150 ±20 2500 285 150 -40 to +150 -40 to +125 Typ ...

Page 2

... GA75TS60U Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES V Collector-to-Emitter Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage GE(th Forward Transconductance „ Collector-to-Emitter Leaking Current CES V Diode Forward Voltage - Maximum FM I Gate-to-Emitter Leakage Current GES Dynamic Characteristics - T Parameter Q Total Gate Charge (turn-on) ...

Page 3

... Fig Typical Output Characteristics www.irf.com 1 f, Frequency (KHz) (Load Current = I of fundamental) RMS 1000 100  10 = 15V 1 2.5 5.0 Fig Typical Transfer Characteristics GA75TS60U For both: D uty cy cle: 50 125° 90°C s ink G ate drive as specified Power Dissipation = Dis sip ation = 270 150 C ...

Page 4

... GA75TS60U 100 T , Case Temperature ( C Fig Maximum Collector Current vs. Case Temperature 0 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case PULSE WIDTH 2.0 1.0 125 150 -60 -40 -20 ° C) Fig Typical Collector-to-Emitter Voltage vs. Junction Temperature ular ratio 15V  I = 150 37.5 37. 100 120 140 160 T , Junction Temperature ( C) ° ...

Page 5

... Resistance www.irf.com  SHORTED 100 0 Fig Typical Gate Charge vs.  100 R = -60 -40 -20 ( Fig Typical Switching Losses vs. GA75TS60U = 400V = 75A 100 200 300 Q , Total Gate Charge (nC) G Gate-to-Emitter Voltage = 0 = Ohm G2 = 15V = 360V  I = 150 37 100 120 140 160 ° Junction Temperature ( Junction Temperature 400 A ...

Page 6

... GA75TS60U  Ohm 125 C ° 360V 15V 120 160 I , Collector-to-emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current 125 ° 25° 1.0 2.0 3.0 4 lta Fig Typical Forward Voltage Drop vs. Instantaneous Forward Current 20V 125° easured at term inal (Peak V oltage 200 ...

Page 7

... ° ° /µ Fig Typical Reverse Recovery vs. di www.irf.com ° ° /dt Fig Typical Recovery Current vs GA75TS60U /µ ...

Page 8

... GA75TS60U Fig Test Circuit for Measurement off(diode d(on Fig Test Waveforms for Circuit of Fig. 17, Defining d(on ff d(off) f Fig Test Waveforms for Circuit of Fig. 17, Defining Vce Fig Test Waveforms for Circuit of Fig. 17 µ S Vce d(off) f trr trr Irr V cc Irr Defining rec ...

Page 9

... Figure 21 480V Figure 22. www.irf.com GA75TS60U 480V @25° ...

Page 10

... GA75TS60U Notes: Q Repetitive rating 20V, pulse width limited by GE max. junction temperature. R See fig For screws M6. T For screws M5. U Pulse width 50µs; single shot. Case Outline — INT-A-PAK 80.30 [ 3.161 79.70 3.138 11 10 34.70 [ 1.366 ] 33.70 1.327 [.314] MAX. 0.15 [.0059] CONVEX 92 ...

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