GA75TS60U Vishay, GA75TS60U Datasheet - Page 2

• Manufacturer Part Number: GA75TS60U
• Description: IGBT FAST 600V 75A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA75TS60U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 75A
• Current - Collector (ic) (max): 75A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 7.88nF @ 30V
• Power - Max: 285W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)
• Channel Type: N
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 75A
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Not Compliant

GA75TS60U
Electrical Characteristics @ T
Dynamic Characteristics - T
V
V
V
g
I
V
I
Q
Q
Q
t
t
t
t
E
E
E
C
C
C
t
I
Q
di
CES
GES
d(on)
r
d(off)
f
rr
rr
fe
V
(BR)CES
CE(on)
GE(th)
FM
on
off (1)
ts (1)
ies
oes
res
2
g
ge
gc
rr
(rec)
GE(th)
M
/dt
/ T
J
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance „
Collector-to-Emitter Leaking Current
Diode Forward Voltage - Maximum
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Energy
Turn-Off Switching Energy
Total Switching Energy
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak ReverseCurrent
Diode Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
Parameter
Parameter
b
J
= 125°C (unless otherwise specified)
J
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
600
3.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6274
2061
7880
1.76
1.95
6.35 12.6
340
120
110
250
180
770
133
1.7
-11
3.3
3.1
4.4
83
48
94
98
94
—
—
—
—
—
250
510
170
2.2
6.0
1.0
—
—
—
—
10
—
—
72
—
—
—
—
—
—
—
—
—
—
—
—
—
mV/°C V
mA
A/µs
nA
nC
mJ
nC
V
S
V
pF
ns
ns
A
V
V
V
I
V
V
V
I
I
V
V
I
T
R
I
V
V
V
V
ƒ = 1 MHz
I
R
R
V
di/dt =1300A/µs
C
F
F
C
C
C
J
GE
GE
GE
CE
CE
GE
GE
GE
CC
CC =
GE
GE
CC
CC =
G1
G1
G2
= 75A, V
= 75A, V
= 0.5mA
= 75A
= 75A
= 75A
= 25°C
= V
= 25V, I
= 0V, I
= 15V, I
= 15V, I
= 0V, V
= 0V, V
= ±20V
= 400V, V
= 27 , R
= ±15V
= 0V
= 30V
= 27
= 0
360V
360V
GE
, I
GE
C
GE
CE
CE
C
C
C
C
Conditions
Conditions
= 1mA
G2
= 0V, T
= 500µA
= 75A
= 75A
= 75A, T
= 0V
= 600V
= 600V, T
GE
= 0 ,
= 15V
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J
= 125°C
J
= 125°C
J
= 125°C