FDMS2504SDC Fairchild Semiconductor, FDMS2504SDC Datasheet - Page 7

• Manufacturer Part Number: FDMS2504SDC
• Description: MOSFET N-CH 25V DUAL POWER56
• Manufacturer: Fairchild Semiconductor
• Series: Dual Cool™, PowerTrench®, SyncFET™r

Specifications of FDMS2504SDC

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.25 mOhm @ 32A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 119nC @ 10V
• Input Capacitance (ciss) @ Vds: 7770pF @ 13V
• Power - Max: 3.3W
• Mounting Type: Surface Mount
• Package / Case: *
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.25 mOhms
• Forward Transconductance Gfs (max / Min): 221 S
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 49 A
• Power Dissipation: 104 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 39 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMS2504SDCTR

©2010 Fairchild Semiconductor Corporation
FDMS2504SDC Rev.C
Typical Characteristics
SyncFET Schottky body diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverse recovery
characteristic of the FDMS2504SDC.
35
30
25
20
15
10
-5
diode reverse recovery characteristic
5
0
Figure 14. FDMS2504SDC SyncFET body
0
5
10
TIME (ns)
di/dt = 300 A/
(continued)
15
μ
s
20
25
7
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power in
the device.
10
10
10
10
10
-2
-3
-4
-5
-6
Figure 15. SyncFET body diode reverse
leakage versus drain-source voltage
0
5
V
DS
, REVERSE VOLTAGE (V)
10
T
T
T
J
J
J
= 100
= 25
= 125
15
o
C
o
o
C
C
20
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