FDMS2504SDC Fairchild Semiconductor, FDMS2504SDC Datasheet - Page 2

• Manufacturer Part Number: FDMS2504SDC
• Description: MOSFET N-CH 25V DUAL POWER56
• Manufacturer: Fairchild Semiconductor
• Series: Dual Cool™, PowerTrench®, SyncFET™r

Specifications of FDMS2504SDC

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.25 mOhm @ 32A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 119nC @ 10V
• Input Capacitance (ciss) @ Vds: 7770pF @ 13V
• Power - Max: 3.3W
• Mounting Type: Surface Mount
• Package / Case: *
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.25 mOhms
• Forward Transconductance Gfs (max / Min): 221 S
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 49 A
• Power Dissipation: 104 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 39 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMS2504SDCTR

©2010 Fairchild Semiconductor Corporation
FDMS2504SDC Rev.C
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
ΔBV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
V
t
Q
ΔV
DSS
GSS
d(on)
r
d(off)
f
rr
DS(on)
FS
GS(th)
SD
iss
oss
rss
g
ΔT
ΔT
g
g
gs
gd
rr
Symbol
DSS
GS(th)
DSS
J
J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current, Forward V
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
T
J
= 25°C unless otherwise noted
I
I
V
V
I
V
V
V
V
D
D
D
V
V
V
V
V
f = 1 MHz
V
V
I
DS
GS
GS
GS
GS
GS
DD
F
DD
GS
GS
GS
= 1 mA, V
= 10 mA, referenced to 25 °C
DS
GS
GS
= 10 mA, referenced to 25 °C
= 32 A, di/dt = 300 A/μs
= 20 V, V
= 20 V, V
= V
= 10 V, I
= 4.5 V, I
= 10 V, I
= 5 V, I
= 13 V, V
= 13 V, I
= 10 V, R
= 0 V to 10 V
= 0 V to 4.5 V
= 0 V, I
= 0 V, I
2
DS
Test Conditions
, I
GS
D
S
S
D
D
D
D
GS
DS
D
= 32 A
= 2 A
= 32 A
GS
GEN
= 1 mA
= 0 V
= 32 A
= 32 A, T
= 32 A,
= 28 A
= 0 V
= 0 V
= 0 V,
= 6 Ω
V
I
D
DD
= 32 A
J
= 13 V,
= 125 °C
(Note 2)
(Note 2)
Min
1.2
25
16.5
0.38
0.75
5843
1615
221
9.7
Typ
317
52
1.6
1.0
1.4
1.4
18
44
85
39
39
0.5
21
-5
9
5
7770
2150
Max
1.25
1.75
119
0.7
1.2
475
500
100
1.0
63
84
3.0
1.8
33
18
70
10
55
www.fairchildsemi.com
mV/°C
mV/°C
Units
mΩ
nC
pF
pF
pF
nC
nC
nC
nC
ns
μA
nA
ns
ns
ns
ns
Ω
V
V
V
S