FDMS2504SDC Fairchild Semiconductor, FDMS2504SDC Datasheet - Page 4

MOSFET N-CH 25V DUAL POWER56

FDMS2504SDC

Manufacturer Part Number
FDMS2504SDC
Description
MOSFET N-CH 25V DUAL POWER56
Manufacturer
Fairchild Semiconductor
Series
Dual Cool™, PowerTrench®, SyncFET™r
Datasheet

Specifications of FDMS2504SDC

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.25 mOhm @ 32A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
42A
Vgs(th) (max) @ Id
3V @ 1mA
Gate Charge (qg) @ Vgs
119nC @ 10V
Input Capacitance (ciss) @ Vds
7770pF @ 13V
Power - Max
3.3W
Mounting Type
Surface Mount
Package / Case
*
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.25 mOhms
Forward Transconductance Gfs (max / Min)
221 S
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
49 A
Power Dissipation
104 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Gate Charge Qg
39 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMS2504SDCTR
©2010 Fairchild Semiconductor Corporation
FDMS2504SDC Rev.C
Typical Characteristics
180
150
120
180
150
120
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
90
60
30
90
60
30
Figure 3. Normalized On Resistance
0
Figure 1.
0
-75
1.5
Figure 5. Transfer Characteristics
0
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
DS
V
I
V
-50
D
vs Junction Temperature
GS
GS
V
= 32 A
= 5 V
GS
= 3.5 V
V
= 10 V
GS
V
T
V
= 4.5 V
1
-25
DS
J
On Region Characteristics
GS
,
2.0
= 10 V
JUNCTION TEMPERATURE (
,
, GATE TO SOURCE VOLTAGE (V)
DRAIN TO SOURCE VOLTAGE (V)
T
0
J
= 125
2
25
μ
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
o
2.5
s
C
50
T
J
3
= 25 °C unless otherwise noted
75
T
V
V
J
GS
3.0
GS
T
= -55
o
100 125 150
C )
J
= 3 V
= 2.5 V
= 25
4
o
C
o
μ
C
s
3.5
5
4
0.01
200
100
0.1
10
20
16
12
5
4
3
2
1
0
1
8
4
0
Figure 2.
Figure 4.
0.0
Forward Voltage vs Source Current
0
2
vs Drain Current and Gate Voltage
Figure 6.
V
V
GS
GS
V
= 0 V
= 2.5 V
SD
30
0.2
T
, BODY DIODE FORWARD VOLTAGE (V)
V
Normalized On-Resistance
J
On-Resistance vs Gate to
GS
= 125
I
Source Voltage
D
4
V
Source to Drain Diode
,
,
GS
GATE TO SOURCE VOLTAGE (V)
DRAIN CURRENT (A)
60
o
= 3 V
C
V
0.4
GS
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
I
D
T
= 3.5 V
= 32 A
J
= -55
90
T
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
6
J
T
= 25
T
J
J
o
0.6
V
= 125
C
= 25
GS
o
120
C
= 4.5 V
o
o
C
C
8
0.8
www.fairchildsemi.com
V
150
μ
GS
s
= 10 V
μ
s
180
1.0
10

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