FDMS2504SDC Fairchild Semiconductor, FDMS2504SDC Datasheet - Page 5

• Manufacturer Part Number: FDMS2504SDC
• Description: MOSFET N-CH 25V DUAL POWER56
• Manufacturer: Fairchild Semiconductor
• Series: Dual Cool™, PowerTrench®, SyncFET™r

Specifications of FDMS2504SDC

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.25 mOhm @ 32A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 119nC @ 10V
• Input Capacitance (ciss) @ Vds: 7770pF @ 13V
• Power - Max: 3.3W
• Mounting Type: Surface Mount
• Package / Case: *
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.25 mOhms
• Forward Transconductance Gfs (max / Min): 221 S
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 49 A
• Power Dissipation: 104 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 39 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMS2504SDCTR

©2010 Fairchild Semiconductor Corporation
FDMS2504SDC Rev.C
Typical Characteristics
Figure 9.
0.01
500
100
0.1
10
40
10
10
Figure 7.
8
6
4
2
0
1
0.01
1
0.01
0
Unclamped Inductive Switching Capability
THIS AREA IS
LIMITED BY r DS
SINGLE PULSE
T
R
T
Figure 11.
J
A
θ
JA
= MAX RATED
I
= 25
D
= 81
= 32 A
15
0.1
V
o
C
Gate Charge Characteristics
DS
V
0.1
o
t
C/W
DD
AV
, DRAIN to SOURCE VOLTAGE (V)
Operating Area
, TIME IN AVALANCHE (ms)
Q
= 10 V
(
g
30
on
Forward Bias Safe
, GATE CHARGE (nC)
)
1
V
DD
T
J
1
= 13 V
45
= 125
T
10
T
V
o
J
C
J
DD
= 25 °C unless otherwise noted
= 25
60
= 16 V
10
o
C
T
100
J
= 100
75
10 ms
100 ms
100 us
1 ms
1 s
10 s
DC
o
100
C
1000
90
200
5
10000
8000
1000
1000
250
200
150
100
200
100
0.5
50
10
Figure 10. Maximum Continuous Drain
0
1
0.1
25
10
Figure 12.
-4
Figure 8.
f = 1 MHz
V
Current vs Case Temperature
GS
Limited by package
10
= 0 V
V
GS
-3
V
50
DS
Power Dissipation
to Source Voltage
= 4.5 V
T
, DRAIN TO SOURCE VOLTAGE (V)
C
t, PULSE WIDTH (sec)
10
Single Pulse Maximum
Capacitance vs Drain
,
CASE TEMPERATURE (
V
-2
GS
= 10 V
75
1
10
-1
100
1
SINGLE PULSE
R
T
R
10
o
A
θ
θ
C )
JA
JC
= 25
125
= 1.2
= 81
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10
C
o
100
C
C
C
oss
iss
rss
o
o
C/W
C/W
1000
150
30