HD64F3048BF25 Renesas Electronics America, HD64F3048BF25 Datasheet - Page 700

• Manufacturer Part Number: HD64F3048BF25
• Description: IC H8 MCU FLASH 128K 100QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of HD64F3048BF25

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 8MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-QFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Section 21 Electrical Characteristics
Notes: 1. Set the times according to the program/erase algorithms.
Rev. 3.00 Sep 27, 2006 page 672 of 872
REJ09B0325-0300
2. Programming time per 128 bytes. (Shows the total time the P bit in the flash memory
3. Block erase time. (Shows the total time the E bit in FLMCR1 is set. It does not include
4. To specify the maximum programming time value (t
5. For the maximum erase time (t
The wait time after P bit setting should be changed as follows according to the value of
Programming counter (n) = 1 to 6:
Programming counter (n) = 7 to 1000:
Programming counter (n) [in additional programming] = 1 to 6: t
t
To set the maximum erase time, the values of t
Examples:
control register (FLMCR1) is set. It does not include the programming verification time.)
the erase verification time.)
programming algorithm, set the max. value (1000) for the maximum programming count
(N).
the programming counter (n).
wait time after E bit setting (t
the above formula.
E
(max) = Wait time after E bit setting (t
When t
When t
se
se
= 100 [ms], N = 12
= 10 [ms], N = 120
se
) and the maximum erase count (N):
E
(max)), the following relationship applies between the
se
) x maximum erase count (N)
se
and N should be set so as to satisfy
P
(max)) in the 128-byte
t
t
sp30
sp200
sp10
= 30 µs
= 10 µs
= 200 µs