ATA6613P-PLQW Atmel, ATA6613P-PLQW Datasheet - Page 23
ATA6613P-PLQW
Manufacturer Part Number
ATA6613P-PLQW
Description
MCU W/LIN TXRX REG WTCHDG 48-QFN
Manufacturer
Atmel
Series
AVR® ATA66 LIN-SBCr
Datasheet
1.ATA6612-EK.pdf
(364 pages)
Specifications of ATA6613P-PLQW
Core Processor
AVR
Core Size
8-Bit
Speed
16MHz
Connectivity
I²C, LIN, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
23
Program Memory Size
16KB (16K x 8)
Program Memory Type
FLASH
Eeprom Size
512 x 8
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
48-QFN Exposed Pad
Processor Series
ATA6x
Core
AVR8
Data Bus Width
8 bit
Data Ram Size
1 KB
Interface Type
I2C, SPI, USART
Maximum Clock Frequency
16 MHz
Number Of Programmable I/os
23
Number Of Timers
3
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 8 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ATA6613P-PLQW
Manufacturer:
ATMEL
Quantity:
5 000
Part Number:
ATA6613P-PLQW
Manufacturer:
ATMEL/爱特梅尔
Quantity:
20 000
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5. Electrical Characteristics (Continued)
5V < V
9111H–AUTO–01/11
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
8.10
8.11
8.12
No.
8.6
8.7
8.8
8.9
9.1
9.2
9.3
9.4
9.5
9.6
9
S
< 27V, –40°C < T
Parameters
Pull-up resistor to V
Voltage drop at the serial
diodes
LIN current limitation
V
Input leakage current at
the receiver including
pull-up resistor as
specified
Leakage current LIN
recessive
Leakage current when
control unit disconnected
from ground.
Loss of local ground
must not affect
communication in the
residual network.
Leakage current at a
disconnected battery.
Node has to sustain the
current that can flow
under this condition. Bus
must remain operational
under this condition.
LIN Bus Receiver
Center of receiver
threshold
Receiver dominant state V
Receiver recessive state V
Receiver input
hysteresis
Pre_Wake detection LIN
High-level input voltage
Pre_Wake detection LIN
Low-level input voltage
BUS
= V
Batt_max
case
S
< 125°C, –40°C < T
Test Conditions
The serial diode is
mandatory
In pull-up path with R
I
Input leakage current
Driver off
V
V
Driver off
8V < V
8V < V
V
GND
V
0V < V
V
V
0V < V
V
(V
V
Activates the LIN receiver
SerDiode
BUS
Batt
BUS
Batt
Batt
SUP_Device
BUS_CNT
EN
EN
hys
th_dom
= 5V
= 5V
= V
= 12V
= 12V
disconnected
Device
= 0V
Batt
BUS
BUS
BUS
V
= 10mA
th_rec
+ V
Batt
=
< 18V
= V
< 18V
< 18V
< 18V
= GND
th
_
– V
j
S
rec
< 150°C, unless otherwise specified. All values refer to GND pins
th_dom
)/2
slave
Pin
LIN
LIN
LIN
LIN
LIN
LIN
LIN
LIN
LIN
LIN
LIN
LIN
LIN
I
I
BUS_PAS_dom
I
I
BUS_PAS_rec
BUS_NO_gnd
BUS_NO_bat
V
Symbol
V
V
I
V
V
BUS_LIM
BUS_CNT
SerDiode
V
BUSdom
V
R
BUSrec
BUShys
LINH
LINL
LIN
Atmel ATA6612/ATA6613
0.6
0.475
0.028
V
S
Min.
–10
–27
0.4
20
40
–1
V
V
– 2V
S
S
V
S
0.1
–0.35
0.5
Typ.
+0.5
120
0.1
30
10
V
S
V
S
0.4
0.525
0.175
Max.
V
0.3V
V
3.3V
200
+10
1.0
60
20
V
V
S
2
S
S
S
+
–
V
S
Unit
mA
mA
k
µA
µA
µA
V
V
V
V
V
V
V
Type*
D
A
A
A
A
A
A
A
A
A
A
A
A
23
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