IXGH25N100 IXYS, IXGH25N100 Datasheet
IXGH25N100
Specifications of IXGH25N100
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IXGH25N100 Summary of contents
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... V GE(th 0.8 • V CES CE CES GES CE(sat) C C90 GE © 1996 IXYS All rights reserved IXGH/IXGM 25 N100 IXGH/IXGM 25 N100A 1000 Maximum Ratings 1000 = 1 M 1000 100 = 0.8 V CES 200 -55 ... +150 150 -55 ... +150 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 Characteristic Values (T ...
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... V CE higher T or increased off R thJC R thCK IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: IXGH 25N100 IXGH 25N100A Characteristic Values ( unless otherwise specified) J min. typ ...
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... Volts GE Fig. 5 Input Admittance 10V 25° 125° Volts GE © 1996 IXYS All rights reserved IXGH 25N100 IXGH 25N100A 13V V = 15V G E 11V 40° 25N100g1.JNB IXGM 25N100 IXGM 25N100A Fig. 2 Output Characterstics 200 T = 25°C 180 J 160 140 120 100 ...
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... D=0.05 D=0.02 D=0.01 Single Pulse 0.01 0.0001 0.001 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: IXGH 25N100 IXGH 25N100A 100 0.1 0.01 100 125 150 ...