IXGH25N100 IXYS, IXGH25N100 Datasheet - Page 4

• Manufacturer Part Number: IXGH25N100
• Description: IGBT 50A 1000V TO-247AD
• Manufacturer: IXYS

Specifications of IXGH25N100

• Voltage - Collector Emitter Breakdown (max): 1000V
• Vce(on) (max) @ Vge, Ic: 3.5V @ 15V, 25A
• Current - Collector (ic) (max): 50A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Vces, (v): 1000
• Ic25, Tc=25°c, Igbt, (a): 50
• Ic90, Tc=90°c, Igbt, (a): 25
• Ic110, Tc=110°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.5
• Tfi, Typ, Tj=25°c, Igbt, (ns): 500
• Eoff, Typ, Tj=125°c, Igbt, (mj): 10
• Rthjc, Max, Igbt, (°c/w): 0.62
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
2400
2000
1600
1200
0.01
800
400
0.1
15
13
11
0.0001
9
7
5
3
1
0
1
0
0
Fig.7 Gate Charge
Fig.9 Capacitance Curves
Fig.10 Transient Thermal Impedance
D=0.05
D=0.02
D=0.1
D=0.01
D=0.5
D=0.2
Single Pulse
V
I
I
C
G
CE
= 25A
= 10mA
25
= 800V
5
Gate Charge - nCoulombs
f = 1MHz
C
C
C
oes
res
ies
50
10
V
CE
0.001
- Volts
75
15
100
20
125
150
25
0.01
Pulse Width - Seconds
4,835,592
4,850,072
IXGH 25N100
IXGH 25N100A
0.01
100
0.1
10
0.1
1
0
Fig.8 Turn-Off Safe Operating Area
4,881,106
4,931,844
D = Duty Cycle
200
T
dV/dt < 3V/ns
5,017,508
5,034,796
J
25N100g2.JNB
= 125°C
400
V
CE
- Volts
1
5,049,961
5,063,307
IXGM 25N100
IXGM 25N100A
600
5,187,117
5,237,481
800
1000
5,486,715
5,381,025
10