IXGH25N100 IXYS, IXGH25N100 Datasheet - Page 3

• Manufacturer Part Number: IXGH25N100
• Description: IGBT 50A 1000V TO-247AD
• Manufacturer: IXYS

Specifications of IXGH25N100

• Voltage - Collector Emitter Breakdown (max): 1000V
• Vce(on) (max) @ Vge, Ic: 3.5V @ 15V, 25A
• Current - Collector (ic) (max): 50A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Vces, (v): 1000
• Ic25, Tc=25°c, Igbt, (a): 50
• Ic90, Tc=90°c, Igbt, (a): 25
• Ic110, Tc=110°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.5
• Tfi, Typ, Tj=25°c, Igbt, (ns): 500
• Eoff, Typ, Tj=125°c, Igbt, (mj): 10
• Rthjc, Max, Igbt, (°c/w): 0.62
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

© 1996 IXYS All rights reserved
10
50
40
30
20
10
50
45
40
35
30
25
20
15
10
9
8
7
6
5
4
3
2
1
0
0
5
0
Fig. 1 Saturation Characteristics
0
Fig. 3 Collector-Emitter Voltage
6
Fig. 5 Input Admittance
0
V
T
CE
1
J
7
= 25°C
I
= 10V
C
vs. Gate-Emitter Voltage
= 12.5A
1
2
8
3
T
9
J
= 125°C
T
V
V
V
2
J
4
I
T
C
CE
= 25°C
I
GE
GE
10
J
C
= 25A
= 25°C
= 50A
- Volts
- Volts
- Volts
5
11
3
6
V
T
G E
12
J
= - 40°C
= 15V
7
13
4
8
11V
13V
14
9
9V
7V
15
10
5
25N100g1.JNB
IXGH 25N100
IXGH 25N100A
200
180
160
140
120
100
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
1.2
1.1
1.0
0.9
0.8
0.7
0.6
80
60
40
20
0
-50
-50
Fig. 2 Output Characterstics
Fig. 6 Temperature Dependence of
Fig. 4 Temperature Dependence
0
T
J
2
-25
-25
= 25°C
BV
I
Breakdown and Threshold Voltage
of Output Saturation Voltage
C
V
I
C
4
GE(th)
= 250µA
= 250µA
CES
0
0
6
T
T
25
25
J
J
V
8
- Degrees C
- Degrees C
CE
IXGM 25N100
IXGM 25N100A
10 12 14 16 18 20
50
50
- Volts
75
75
I
C
= 50A
100 125 150
100 125 150
I
C
V
I
13V
11V
C
= 12.5A
9V
GE
7V
= 25A
= 15V