IRF7103Q International Rectifier, IRF7103Q Datasheet
IRF7103Q
Specifications of IRF7103Q
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IRF7103Q Summary of contents
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... STG Thermal Resistance Symbol Parameter R Junction-to-Drain Lead JL R Junction-to-Ambient JA www.irf.com AUTOMOTIVE MOSFET V DSS 50V Top View @ 4. 4.5V GS See Fig.16c, 16d, 19, 20 IRF7103Q ® HEXFET Power MOSFET R max (mW) I DS(on) D 130@V = 10V 3.0A GS 200@V = 4.5V 1. SO-8 Max. Units 3.0 2 ...
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... IRF7103Q Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...
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... BOTTOM 4.5V 1 0.1 10 100 0.1 Fig 2. Typical Output Characteristics 2 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 0 12.0 15.0 Fig 4. Normalized On-Resistance IRF7103Q VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 20µs PULSE WIDTH Tj = 175° Drain-to-Source Voltage (V) 3. 10V 100 120 140 160 180 ° ...
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... IRF7103Q 10000 0V MHZ C iss = rss = oss = 1000 Ciss Coss 100 Crss Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 10 ° 175 0.1 0.4 0.6 0.8 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage SHORTED 100 0 Fig 6. Typical Gate Charge Vs. 100 10 1 ° ...
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... Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com Fig 10a. Switching Time Test Circuit V DS 90% 150 175 ° 10 d(on) Fig 10b. Switching Time Waveforms 0.001 0.01 0 Rectangular Pulse Duration (sec) IRF7103Q + - d(off) f Notes: 1. Duty Factor D = t1/t2 2. Peak Zthja + 100 5 ...
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... IRF7103Q 0.15 0.14 0.13 0. 3.0A 0.11 0.10 0.09 4.5 6.0 7.5 9.0 10.5 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage 2.0 1.8 1.5 1.3 1.0 -75 -50 - Temperature ( °C ) Fig 14. Typical Threshold Voltage Vs. Junction Temperature 6 2.500 2.000 4.5V 1.500 1.000 ...
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... Current Sampling Resistors Fig 17. Gate Charge Test Circuit www.irf.com I D TOP 1.2A 2.5A BOTTOM 3. Fig 16c. Unclamped Inductive Test Circuit 125 150 175 ° Fig 16d. Unclamped Inductive Waveforms Fig 18. Basic Gate Charge Waveform IRF7103Q 15V DRIVER D.U 20V 0. (BR)DSS Charge ...
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... IRF7103Q 1000 Duty Cycle = Single Pulse 100 10 0.01 1 0.05 0.10 0.1 0.01 1.0E-08 1.0E-07 1.0E-06 Fig 19. Typical Avalanche Current Vs.Pulsewidth 25 TOP Single Pulse BOTTOM 10% Duty Cy cle 3. 100 Starting Junction Temperature (°C) Fig 20. Maximum Avalanche Energy Vs. Temperature 8 1.0E-05 1.0E-04 1.0E-03 tav (sec) Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www ...
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... IRF7103Q SO-8 Tape and Reel TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. This product has been designed and qualified for the Automotive [Q101] market. ...