IRF7103Q International Rectifier, IRF7103Q Datasheet - Page 6

• Manufacturer Part Number: IRF7103Q
• Description: MOSFET N-CH 50V 3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7103Q

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 130 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 255pF @ 25V
• Power - Max: 2.4W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 3A
• Drain Source Voltage Vds: 50V
• On Resistance Rds(on): 130mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: No
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7103Q

IRF7103Q
Fig 12. Typical On-Resistance Vs. Gate
6
0.15
0.14
0.13
0.12
0.11
0.10
0.09
2.0
1.8
1.5
1.3
1.0
Fig 14. Typical Threshold Voltage Vs.
-75
4.5
-50
6.0
-V GS, Gate -to -Source Voltage (V)
Junction Temperature
-25
T J , Temperature ( °C )
Voltage
7.5
0
9.0
25
I D = 3.0A
50
10.5
I D = 250µA
75
12.0
100 125
13.5
150
15.0
2.500
2.000
1.500
1.000
0.500
0.000
Fig 13. Typical On-Resistance Vs. Drain
70
60
50
40
30
20
10
0
1.00
0
V GS = 4.5V
5
10
10.00
I D , Drain Current (A)
Typical Power Vs. Time
Current
15
Time (sec)
V GS = 10V
20
100.00
25
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30
35
1000.00
40