IRF7103Q International Rectifier, IRF7103Q Datasheet - Page 3

• Manufacturer Part Number: IRF7103Q
• Description: MOSFET N-CH 50V 3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7103Q

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 130 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 255pF @ 25V
• Power - Max: 2.4W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 3A
• Drain Source Voltage Vds: 50V
• On Resistance Rds(on): 130mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: No
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7103Q

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100
100.00
10
10.00
1
1.00
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1
TOP
BOTTOM 4.5V
3.0
V DS , Drain-to-Source Voltage (V)
VGS
15V
V GS , Gate-to-Source Voltage (V)
10V
8.0V
7.0V
6.0V
5.5V
5.0V
6.0
1
T J = 175°C
20µs PULSE WIDTH
Tj = 25°C
9.0
V DS = 25V
20µs PULSE WIDTH
T J = 25°C
4.5V
10
12.0
100
15.0
100
0.1
10
1
Fig 4. Normalized On-Resistance
2.5
2.0
1.5
1.0
0.5
0.0
Fig 2. Typical Output Characteristics
0.1
TOP
BOTTOM 4.5V
-60 -40 -20 0
I =
D
V DS , Drain-to-Source Voltage (V)
3.0A
VGS
Vs. Temperature
15V
T , Junction Temperature ( C)
10V
8.0V
7.0V
6.0V
5.5V
5.0V
J
1
20 40 60 80 100 120 140 160 180
20µs PULSE WIDTH
Tj = 175°C
IRF7103Q
4.5V
10
V
°
GS
=
10V
3
100