MPC8536E-ANDROID Freescale Semiconductor, MPC8536E-ANDROID Datasheet - Page 32

• Manufacturer Part Number: MPC8536E-ANDROID
• Description: HARDWARE/SOFTWARE ANDROID OS
• Manufacturer: Freescale Semiconductor
• Series: PowerQUICC ™r
• Type: MPUr

Specifications of MPC8536E-ANDROID

• Contents: Board
• For Use With/related Products: MPC8536
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DDR2 and DDR3 SDRAM
2.6
This section describes the DC and AC electrical specifications for the DDR SDRAM interface of the MPC8536E. Note that
DDR2 SDRAM is GV
2.6.1
Table 12
interfacing to DDR2 SDRAM.
Table 13
to DDR3 SDRAM.
32
I/O supply voltage
I/O reference voltage
I/O termination voltage
Input high voltage
Input low voltage
Output leakage current
Output high current (V
Output low current (V
Notes:
1. GV
2. MV
3. V
4. Output leakage is measured with all outputs disabled, 0 V
I/O supply voltage
I/O reference voltage
Input high voltage
Input low voltage
Output leakage current
Notes:
1. GV
2. MV
3. Output leakage is measured with all outputs disabled, 0 V
Peak-to-peak noise on MV
equal to MV
Peak-to-peak noise on MV
TT
DD
REF
DD
REF
is not applied directly to the device. It is the supply to which far end signal termination is made and is expected to be
provides the recommended operating conditions for the DDR SDRAM Controller of the MPC8536E when interfacing
provides the recommended operating conditions for the DDR SDRAM component(s) of the MPC8536E when
is expected to be within 50 mV of the DRAM GV
is expected to be within 50 mV of the DRAM GV
DDR2 and DDR3 SDRAM
is expected to be equal to 0.5 × GV
n is expected to be equal to 0.5 × GV
Parameter/Condition
Parameter/Condition
Table 13. DDR3 SDRAM Interface DC Electrical Characteristics for GV
DDR2 and DDR3 SDRAM DC Electrical Characteristics
REF
Table 12. DDR2 SDRAM DC Electrical Characteristics for GV
. This rail should track variations in the DC level of MV
MPC8536E PowerQUICC III Integrated Processor Hardware Specifications, Rev. 3
DD
OUT
OUT
(type) = 1.8 V and DDR3 SDRAM is GV
= 0.280 V)
= 1.420 V)
REF
REF
n may not exceed ±1% of the DC value.
may not exceed ±2% of the DC value.
DD
DD
Symbol
, and to track GV
MV
Symbol
MV
GV
GV
, and to track GV
V
V
I
V
I
I
OZ
OH
V
V
I
OL
TT
OZ
REF
IH
IL
REF
DD
IH
IL
DD
n
DD
DD
at all times.
≤
MV
at all times.
≤
MV
MV
0.49 × GV
V
0.49 × GV
V
OUT
REF
DD
OUT
REF
DD
REF
–13.4
1.425
GND
DD
–0.3
13.4
Min
Min
–50
–50
1.7
n + 0.100
DC variations as measured at the receiver.
(type) = 1.5 V.
≤
+ 0.125
≤
– 0.04
DC variations as measured at the receiver.
GV
GV
REF
DD
DD
DD
DD
.
.
.
MV
MV
MV
0.51 × GV
0.51 × GV
REF
GV
REF
REF
GV
1.575
Max
DD
n – 0.100
Max
50
DD
1.9
50
—
—
DD
– 0.125
+ 0.04
+ 0.3
(typ) = 1.8 V
DD
DD
DD
(typ) = 1.5 V
Freescale Semiconductor
Unit
Unit
μA
mA
mA
μA
V
V
V
V
V
V
V
V
V
Notes
Notes
—
—
—
—
—
—
1
2
3
1
2
3
4