DEMO9S08JS16 Freescale Semiconductor, DEMO9S08JS16 Datasheet - Page 8

• Manufacturer Part Number: DEMO9S08JS16
• Description: BOARD DEMO FOR JS16 FAMILY
• Manufacturer: Freescale Semiconductor
• Type: MCUr

Specifications of DEMO9S08JS16

• Contents: 2 Boards, Cable, Documentation, DVD
• Processor To Be Evaluated: MC9S08JS16
• Data Bus Width: 8 bit
• Interface Type: USB
• Operating Supply Voltage: 5 V
• Silicon Manufacturer: Freescale
• Core Architecture: HCS08
• Core Sub-architecture: HCS08
• Silicon Core Number: MC9S08
• Silicon Family Name: S08JS
• Rohs Compliant: Yes
• For Use With/related Products: MC9S08JS16
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics
P
P
For most applications, P
(if P
Solving
where K is a constant pertaining to the particular part. K can be determined from
P
solving
3.4
Although damage from static discharge is much less common on these devices than on early CMOS
circuits, normal handling precautions must be used to avoid exposure to static discharge. Qualification
tests are performed to ensure that these devices can withstand exposure to reasonable levels of static
without suffering any permanent damage. This device was qualified to AEC-Q100 Rev E. A device is
considered to have failed if, after exposure to ESD pulses, the device no longer meets the device
specification requirements. Complete DC parametric and functional testing is performed per the applicable
device specification at room temperature followed by hot temperature, unless specified otherwise in the
device specification.
3.5
This section includes information about power supply requirements, I/O pin characteristics, and power
supply current in various operating modes.
8
ESD Target for Machine Model (MM) — MM circuit
description
ESD Target for Human Body Model (HBM) — HBM
circuit description
D
I/O
D
Num C
1
= P
(at equilibrium) for a known T
I/O
= Power dissipation on input and output pins — user determined
int
is neglected) is:
Equation 1
Equation 1
+ P
Electrostatic Discharge (ESD) Protection Characteristics
DC Characteristics
Operating voltage
I/O
P
int
Parameter
and
= I
and
DD
Equation 2
I/O
Equation 2
2
× V
<< P
Parameter
DD
int
K = P
, Watts — chip internal power
MC9S08JS16 Series MCU Data Sheet, Rev. 4
Table 5. ESD Protection Characteristics
A
and can be neglected. An approximate relationship between P
iteratively for any value of T
. Using this value of K, the values of P
for K gives:
D
P
Table 6. DC Characteristics
× (T
D
= K ÷ (T
A
+ 273°C) + θ
Symbol
V
V
THHBM
THMM
J
+ 273°C)
JA
Symbol
× (P
—
D
A
)
2
.
Min
2.7
Value
2000
200
D
and T
Typical
Equation 3
—
J
can be obtained by
Freescale Semiconductor
1
Max
by measuring
5.5
D
Unit
and T
V
V
Eqn. 2
Eqn. 3
Unit
V
J