EVALED7706 STMicroelectronics, EVALED7706 Datasheet - Page 27

EVALUATION BOARD FOR LED7706

EVALED7706

Manufacturer Part Number
EVALED7706
Description
EVALUATION BOARD FOR LED7706
Manufacturer
STMicroelectronics
Datasheet

Specifications of EVALED7706

Current - Output / Channel
30mA
Outputs And Type
6, Non-Isolated
Voltage - Output
36 V
Features
Dimmable, Extra 5V Output
Voltage - Input
4.5 ~ 36 V
Utilized Ic / Part
LED7706
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-6445

Available stocks

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Manufacturer
Quantity
Price
Part Number:
EVALED7706
Manufacturer:
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LED7706
6.2
Thermal considerations
In order to prevent the device from exceeding the thermal shutdown threshold (150 °C), it is
important to estimate the junction temperature through the following equation:
Equation 18
where T
ambient and P
The R
is 42 °C/W.
The P
Equation 19
where D is defined as:
Equation 20
and D
Equation 21
where t
Equation 22
where I
master current generator (typically 400 mV).
The voltages across the other current generators depend on the spread of the LEDs forward
voltage. The worst case for power dissipation (maximum forward voltage LEDs in the master
row, minimum forward voltage LEDs in all other rows) can be estimated as:
a)
b)
c)
D,tot
DIM
th,JA
r
ROW
A
and t
Conduction losses due to the R
Switching losses due to the power MOSFET turn on and off, calculated as:
Current generators losses. This contribution is strictly related to the LEDs used in
the application. Only the contribution of the leading current generator (“master”
current generator) can be predicted, regardless of the LEDs forward voltage:
is the ambient temperature, R
is the duty cycle of the PWM dimming signal.
has several contributions, listed below.
measured on the application demonstration board (described in
is the current flowing through the row, whereas V
f
D,tot
are the power MOSFET rise time and fall time respectively.
is the power dissipated by the device.
P
, D
sw
P
P
GEN
, D
T
=
cond
J
V
,
Master
=
OUT
T
D
=
th,JA
Amb
DS(on)
R
=
I
=
DSon
IN
1
I
+
is the equivalent thermal resistance junction to
ROW
R
f
sw
V
of the internal power switch, equal to:\
th
V
OUT
I
IN
,
2
IN
JA
t (
V
r
IFB
D
P
+
2
, D
D
) t
D
f
tot
DIM
DIM
D
DIM
IFB
is the voltage across the
Application information
Section 6.5
)
27/46

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