LM3445-120VFLBK/NOPB National Semiconductor, LM3445-120VFLBK/NOPB Datasheet - Page 3

• Manufacturer Part Number: LM3445-120VFLBK/NOPB
• Description: PROGRAMMERS, DEVELOPMENT SYSTEMS
• Manufacturer: National Semiconductor
• Series: PowerWise®r

Specifications of LM3445-120VFLBK/NOPB

• Current - Output / Channel: 365mA
• Outputs And Type: 1, Isolated
• Voltage - Output: 20V
• Features: Dimmable, TRIAC Dimmable
• Voltage - Input: 90 ~ 135VAC
• Utilized Ic / Part: LM3445
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BLEEDER
V
COFF
CURRENT LIMIT
INTERNAL PWM RAMP
DIM DECODER
CC
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Electrical Characteristics
over the full Operating Temperature Range ( T
design, or statistical correlation. Typical values represent the most likely parametric norm at T
reference purposes only.
BLDR to GND
V
ISNS to GND
ASNS, DIM, FLTR2, COFF to
GND
COFF Input Current
Continuous Power Dissipation
(Note
SUPPLY
CC
V
Symbol
t
ANG_DET
V
D
, GATE, FLTR1 to GND
R
V
R
V
CC-UVLO
V
V
f
t
I
t
V
R
I
RAMP
COFF
ASNS
ISNS
RAMP
RAMP
VCC
COFF
COFF
ASNS
BLDR
TSTH
ISNS
2)
DIM
DIM
Parameter
Bleeder resistance to GND
Operating supply current
Rising threshold
Falling threshold
Hysterisis
Time out threshold
Off timer sinking impedance
Restart timer
ISNS limit threshold
Leading edge blanking time
Current limit reset delay
ISNS limit to GATE delay
Frequency
Valley voltage
Peak voltage
Maximum duty cycle
Angle detect rising threshold
ASNS filter delay
ASNS VMAX
ASNS drive capability sink
ASNS drive capability source
DIM low sink current
DIM High source current
DIM low voltage
DIM high voltage
Tri-state threshold voltage
DIM comparator tri-state impedance
Internally Limited
-0.3V to +2.5V
-0.3V to +7.0V
Limits in standard type face are for T
-0.3V to +17V
-0.3V to +14V
(Note
J
= −40°C to +125°C). Minimum and Maximum limits are guaranteed through test,
100mA
1)
3
Operating Conditions
ESD Susceptibility
HBM
Junction Temperature (T
Storage Temperature Range
Range (Soldering)
V
Junction Temperature
CC
Maximum Lead Temp.
Conditions
I
ISNS = 0 to 1.75V step
Observed on BLDR pin
V
V
V
V
PWM input voltage
threshold
Apply to FLTR1 pin
BLDR
ASNS
ASNS
DIM
DIM
(Note
= 1V
= 4V
= 10mA
= 2V
= 2V
3)
J
= 25°C and those with boldface type apply
J
J-MAX
= +25ºC, and are provided for
)
1.225 1.276 1.327
1.174 1.269 1.364
0.96
2.85
96.5
6.79
3.85
1.65
Min
6.0
0.9
10
-4.00
2.00
5.85
1.00
3.00
98.0
7.21
4.00
2.80
1.33
2.33
4.87
Typ
-4.3
230
180
125
180
7.4
6.4
7.6
33
33
−40°C to +125°C
1
4
-65°C to +150°C
8.0V to 12V
www.national.com
-3.00
Max
2.85
1.04
3.08
7.81
4.15
3.15
5.25
325
7.7
60
150°C
260°C
2 kV
Units
kHz
MΩ
mA
mA
µs
ns
µs
ns
µs
%
Ω
Ω
V
V
V
V
V
V
V
V