STEVAL-ISA053V1 STMicroelectronics, STEVAL-ISA053V1 Datasheet - Page 35
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STEVAL-ISA053V1
Manufacturer Part Number
STEVAL-ISA053V1
Description
BOARD EVALUATION FOR PM6680
Manufacturer
STMicroelectronics
Type
DC/DC Switching Converters, Regulators & Controllersr
Specifications of STEVAL-ISA053V1
Design Resources
STEVAL-ISA053V1 Gerber Files PM6680 Eval Kit Schematic STEVAL-ISA053V1 Bill of Material
Main Purpose
DC/DC, Step Down with LDO
Outputs And Type
3, Non-Isolated
Voltage - Output
1.05V, 1.5V, 5V
Current - Output
5A, 5A, 100mA
Voltage - Input
6 ~ 28V
Regulator Topology
Buck
Frequency - Switching
200kHz, 300kHz
Board Type
Fully Populated
Utilized Ic / Part
PM6680
Input Voltage
6 V to 28 V
Output Voltage
5 V
Product
Power Management Modules
Silicon Manufacturer
ST Micro
Silicon Core Number
PM6680
Kit Application Type
Power Management - Voltage Regulator
Application Sub Type
Step Down DC/DC Controller
Kit Contents
Board
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
For Use With/related Products
PM6680
Other names
497-6378
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STEVAL-ISA053V1
Manufacturer:
STMicroelectronics
Quantity:
1
PM6680
7.13.5
Power MOSFETs
Logic-level MOSFETs are recommended, since low side and high side gate drivers are
powered by LDO5. Their breakdown voltage VBR
In notebook applications, power management efficiency is a high level requirement. The
power dissipation on the power switches becomes an important factor in switching
selections. Losses of high-side and low-side MOSFETs depend on their working conditions.
The power dissipation of the high-side MOSFET is given by:
Equation 18
Maximum conduction losses are approximately:
Equation 19
where R
are approximately:
Equation 20
where ton and toff are the switching times of the turn off and turn off phases of the MOSFET.
As general rule, high side MOSFETs with low gate charge are recommended, in order to
minimize driver losses. Below there is a list of possible choices for the high side MOSFET.
Table 13.
The power dissipation of the low side MOSFET is given by:
Equation 21
Maximum conduction losses occur at the maximum input voltage:
Manufacturer
P
switching
DSon
ST
ST
High side MOSFET manufacturer
is the drain-source on resistance of the high side MOSFET. Switching losses
=
V
IN
×
I (
LOAD
STS12NH3LL
STS17NH3LL
P
conduction
(max)
Type
P
DHighSide
2
−
P
=
∆
2
DLowSide
I
R
L
DSon
)
=
×
P
t
on
conduction
×
Gate charge (nC)
×
=
V
V
f
P
IN
sw
OUT
conduction
min
DSS
+
10
18
+
×
V
P
IN
I
must be higher than V
LOAD
switching
×
I (
LOAD
(max)
(max)
2
Rated reverse voltage (V)
2
+
∆
Device description
2
I
L
)
×
INmax
30
30
t
off
×
.
f
sw
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