MT9HVF6472PY-80ED1 Micron Technology Inc, MT9HVF6472PY-80ED1 Datasheet - Page 8

• Manufacturer Part Number: MT9HVF6472PY-80ED1
• Description: MODULE DDR2 512MB 240-DIMM VLP
• Manufacturer: Micron Technology Inc

Specifications of MT9HVF6472PY-80ED1

• Memory Type: DDR2 SDRAM
• Memory Size: 512MB
• Speed: 800MT/s
• Package / Case: 240-DIMM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Specifications
Table 8: Absolute Maximum Ratings
PDF: 09005aef81de9391
hvf9c32_64_128x72py.pdf - Rev. E 03/10 EN
V
V
Symbol
DD
IN
I
VREF
T
, V
I
T
/V
OZ
I
C
A
I
1
DDQ
OUT
Parameter
V
Voltage on any pin relative to V
Input leakage current; Any input 0V ≤ V
V
pins not under test = 0V)
Output leakage current; 0V ≤ V
DQs and ODT are disabled
V
Module ambient operating temperature
DDR2 SDRAM device operating case
temperature
DD
DD
REF
/V
; V
leakage current; V
DDQ
REF
Notes:
input 0V ≤ V
supply voltage relative to V
2
Stresses greater than those listed may cause permanent damage to the module. This is a
stress rating only, and functional operation of the module at these or any other condi-
tions outside those indicated in each device's data sheet is not implied. Exposure to
absolute maximum rating conditions for extended periods may adversely affect reliability.
1. The refresh rate is required to double when T
2. For further information, refer to technical note TN-00-08: "Thermal Applications," avail-
256MB, 512MB, 1GB (x72, ECC, SR) 240-Pin DDR2 VLP RDIMM
able on Micron’s Web site.
IN
REF
≤ 0.95V; (All other
= Valid V
OUT
SS
≤ V
REF
SS
DDQ
level
IN
≤
;
Command/Address, RAS#,
CAS#, WE# S#, CKE, ODT, BA
CK, CK#
DM
DQ, DQS, DQS#
Commercial
Industrial
Commercial
Industrial
8
Micron Technology, Inc. reserves the right to change products or specifications without notice.
C
exceeds 85°C.
Electrical Specifications
Min
–0.5
–0.5
–10
–10
–18
–40
–40
–5
–5
0
0
© 2006 Micron Technology, Inc. All rights reserved.
Max
2.3
2.3
10
10
18
70
85
85
95
5
5
Units
µA
µA
µA
°C
°C
V
V