MT9HVF6472PY-80ED1 Micron Technology Inc, MT9HVF6472PY-80ED1 Datasheet - Page 13

• Manufacturer Part Number: MT9HVF6472PY-80ED1
• Description: MODULE DDR2 512MB 240-DIMM VLP
• Manufacturer: Micron Technology Inc

Specifications of MT9HVF6472PY-80ED1

• Memory Type: DDR2 SDRAM
• Memory Size: 512MB
• Speed: 800MT/s
• Package / Case: 240-DIMM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 11: DDR2 I
Values shown for MT47H64M8 DDR2 SDRAM only and are computed from values specified in the 512Mb (64 Meg x 8)
component data sheet
PDF: 09005aef81de9391
hvf9c32_64_128x72py.pdf - Rev. E 03/10 EN
Parameter
Operating bank interleave read current: All device banks inter-
leaving reads, I
t
t
bus inputs are stable during deselects; Data bus inputs are switching
CK (I
RCD
DD
DD
);
); CKE is HIGH, S# is HIGH between valid commands; Address
t
CK =
OUT
t
CK (I
= 0mA; BL = 4, CL = CL (I
DD
DD
Specifications and Conditions – 512MB (Continued)
),
t
RC =
t
RC (I
256MB, 512MB, 1GB (x72, ECC, SR) 240-Pin DDR2 VLP RDIMM
DD
),
t
RRD =
DD
), AL =
t
RRD (I
t
RCD (I
DD
),
t
RCD =
DD
13
) - 1 ×
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Symbol
I
DD7
-80E/
-800
3015
2700
-667
© 2006 Micron Technology, Inc. All rights reserved.
I
DD
2610
-53E
Specifications
-40E
2340
Units
mA