MT4VDDT1664HY-335F3 Micron Technology Inc, MT4VDDT1664HY-335F3 Datasheet - Page 18
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MT4VDDT1664HY-335F3
Manufacturer Part Number
MT4VDDT1664HY-335F3
Description
MODULE DDR 128MB 200-SODIMM
Manufacturer
Micron Technology Inc
Specifications of MT4VDDT1664HY-335F3
Memory Type
DDR SDRAM
Memory Size
128MB
Speed
200MHz
Package / Case
200-SODIMM
Main Category
DRAM Module
Sub-category
DDR SDRAM
Module Type
200SODIMM
Device Core Size
64b
Organization
16Mx64
Total Density
128MByte
Chip Density
256Mb
Access Time (max)
700ps
Maximum Clock Rate
333MHz
Operating Supply Voltage (typ)
2.5V
Operating Current
880mA
Number Of Elements
4
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
200
Mounting
Socket
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1344
Table 16: DDR SDRAM Component Electrical Characteristics and Recommended AC
Notes: 1–5, 12-15, 29; notes appear on pages 19–22; 0°C
pdf: 09005aef8086ea3d, source: 09005aef8086ea0b
DD4C8_16_32x64HG.fm - Rev. C 9/04 EN
AC CHARACTERISTICS
PARAMETER
Address and Control input pulse width (for
each input)
LOAD MODE REGISTER command cycle time
DQ-DQS hold, DQS to first DQ to go non-
valid, per access
Data hold skew factor
ACTIVE to PRECHARGE command
ACTIVE to READ with Auto precharge
command
ACTIVE to ACTIVE/AUTO REFRESH command
period
AUTO REFRESH command period
ACTIVE to READ or WRITE delay
PRECHARGE command period
DQS read preamble
DQS read postamble
ACTIVE bank a to ACTIVE bank b command
DQS write preamble
DQS write preamble setup time
DQS write postamble
Write recovery time
Internal WRITE to READ command
delay
Data valid output window
REFRESH to REFRESH command
interval
Average periodic refresh interval
Terminating voltage delay to V
Exit SELF REFRESH to non-READ command
Exit SELF REFRESH to READ
command
Operating Conditions (Continued)
DD
64MB
128MB,
256MB
64MB
128MB,
256MB
SYMBOL MIN
t
t
WPRES
t
t
t
t
t
t
t
t
WPRE
t
t
t
t
WPST
t
t
t
t
XSNR
XSRD
MRD
t
RPRE
REFC
RPST
t
WTR
t
QHS
RAP
RCD
RRD
REFI
VTD
IPW
RAS
t
t
RFC
WR
QH
na
RC
RP
T
t
t
0.25
QHS
t
200
HP -
2.2
0.9
0.4
0.4
A
12
42
15
60
72
15
15
12
15
75
QH -
0
1
0
18
-335
+70°C; V
t
70,000
DQSQ
MAX
140.6
0.55
70.3
15.6
1.1
0.6
0.6
7.8
64MB, 128MB, 256MB (x64, SR)
200-PIN DDR SDRAM SODIMM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
= V
t
t
MIN
0.25
t
QHS
HP -
200
2.2
0.9
0.4
0.4
QH -
15
40
15
60
75
15
15
15
15
75
0
1
0
DD
-262
Q = +2.5V ±0.2V
t
DQSQ
120,00
MAX
140.6
0.75
70.3
15.6
1.1
0.6
0.6
7.8
0
t
MIN
t
0.25
QHS
HP -
t
200
2.2
0.9
0.4
0.4
15
40
20
65
75
20
20
15
15
75
QH -
-26A/-265
0
1
0
©2004 Micron Technology, Inc. All rights reserved.
t
120,000
DQSQ
MAX
140.6
0.75
70.3
15.6
1.1
0.6
0.6
7.8
UNITS NOTES
t
t
t
t
t
t
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
CK
CK
ns
CK
ns
CK
ns
CK
ns
µs
µs
µs
µs
ns
ns
CK
22, 23
31, 49
18, 19
44
39
39
17
22
21
21
21
21