MT36HTS51272FY-53EA3E3 Micron Technology Inc, MT36HTS51272FY-53EA3E3 Datasheet - Page 33

• Manufacturer Part Number: MT36HTS51272FY-53EA3E3
• Description: MODULE DDR2 4GB 240FBDIMM
• Manufacturer: Micron Technology Inc

Specifications of MT36HTS51272FY-53EA3E3

• Memory Type: DDR2 SDRAM
• Memory Size: 4GB
• Speed: 533MT/s
• Package / Case: 240-FBDIMM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 18:
PDF: 09005aef822148b0/source: 09005aef82214898
HTS36C512x72F_2.fm - Rev. A 4/06 EN
42–78
Byte
33
34
35
36
37
38
39
40
41
79
80
81
82
83
84
85
86
87
88
89
90
91
92
Bits 7:4: ΔT
MAX case temperature and baseline MAX case temperature), the
baseline MAX case temperature is 85°C. Bits 3:0: DT4R4W Δ (case
temperature rise difference between IDD4R/page open burst
READ and IDD4W/page open burst WRITE operations).
Thermal resistance of DRAM device package from top (case) to
ambient (Psi T-A DRAM) at still air condition based on JESD51-2
standard.
DT0/T
due to IDD0/activate precharge operation minus 2.8°C offset
temperature. Bit 1: Double refresh mode bit. Bit 0: High
temperature self-refresh rate support indication.
DT2N/DT2Q: Case temperature rise from ambient due to IDD2N/
precharge standby operation for UDIMM and due to IDD2Q/
precharge quiet standby operation for RDIMM.
DT2P: Case temperature rise from ambient due to IDD2P/
precharge power-down operation.
DT3N: Case temperature rise from ambient due to IDD3N/active
standby operation.
DT4R/mode bit: Bits 7:1: Case temperature rise from ambient due
to IDD4R/page open burst read operation. Bit 0: Mode bit to
specify if DT4W is greater or less than DT4R.
DT5B: Case temperature rise from ambient due to IDD5B/burst
refresh operation.
DT7: Case temperature rise from ambient due to IDD7/bank
interleave read mode operation.
FBDIMM reserved bytes
FBDIMM ODT definition
FBDIMM reserved byte
Chanel protocol supported (lower byte)
Chanel protocol supported (upper byte)
Back-to-back turnaround clock cycles
Buffer read access at
Buffer read access at
Buffer read access at
PSI T-A AMB
DT AMB idle_0
DT AMB idle_1
DT AMB idle_2
DT AMB active_1
DT AMB active_2
MT36HTS51272F
“1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”
CASE
mode bits: Bits 7:2: Case temperature rise from ambient
CASEMAX
(DRAM case temperature difference between
t
t
t
CK for MAX CL
CK for MAX CL - 1
CK for MAX CL - 2
Serial Presence-Detect Matrix (Continued)
Description
240-Pin 4GB DDR2 SDRAM FBDIMM (DR, FB, x72)
33
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Entry
-53E
-667
-53E
-667
-53E
-667
-53E
-667
-53E
-667
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Serial Presence-Detect
0A
0B
2A
5C
8D
9B
01
31
04
0F
18
12
15
00
12
00
02
00
00
36
34
32
54
5E
67
73
50
74
80
D
©2006 Micron Technology, Inc. All rights reserved.
MT36HTS51272F
AA
0A
9A
01
31
04
0B
18
12
15
00
12
00
02
00
10
56
40
36
30
54
67
6E
60
6E
78
86
0F
7F
E
Preliminary
0A
01
31
04
0F
0B
18
12
15
00
12
00
02
00
15
44
36
30
2B
4C
55
69
73
69
73
87
92
69
73
N