MT36HTS51272FY-53EA3E3 Micron Technology Inc, MT36HTS51272FY-53EA3E3 Datasheet - Page 32

• Manufacturer Part Number: MT36HTS51272FY-53EA3E3
• Description: MODULE DDR2 4GB 240FBDIMM
• Manufacturer: Micron Technology Inc

Specifications of MT36HTS51272FY-53EA3E3

• Memory Type: DDR2 SDRAM
• Memory Size: 4GB
• Speed: 533MT/s
• Package / Case: 240-FBDIMM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 18:
PDF: 09005aef822148b0/source: 09005aef82214898
HTS36C512x72F_2.fm - Rev. A 4/06 EN
Byte
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
0
1
2
3
4
5
6
7
8
9
SPD revision
Key byte/DRAM device type
Voltage levels of this assembly
SDRAM addressing: Device rows/columns/banks
Module physical attributes: Height/thickness
Module type
Module organization: Module ranks/SDRAM device width (I/O)
Fine time-base dividend and divisor
Medium time-base dividend
Medium time-base divisor
SDRAM MIN cycle time (
SDRAM MAX cycle time (
SDRAM CLs supported: -53E CL = 4, 3; -667 CL = 5, 4, 3
SDRAM MIN CL time (
SDRAM WRITE recovery times supported
SDRAM WRITE recovery time (
SDRAM WRITE latencies supported
SDRAM additive latencies supported
SDRAM MIN RAS-to-CAS delay (
SDRAM MIN row active-to-row active delay (
SDRAM MIN row precharge time (
SDRAM upper nibbles for
SDRAM MIN active to precharge time (
SDRAM MIN auto-refresh-to-active/auto-refresh time (
SDRAM MIN auto-refresh-to-active/auto-refresh command period
(
SDRAM MIN auto-refresh-to-active/auto-refresh command period
(
SDRAM internal WRITE-to-READ command delay (
SDRAM internal READ-to-PRECHARGE command delay (
SDRAM burst lengths supported
SDRAM drivers/terminations supported: 03 = 75 and 100Ω; 07 =
50, 75, and 100Ω
Drivers supported
SDRAM refresh rate (
CRC Range/SPD bytes total/bytes used
t
t
RFC - MSB)
RFC - LSB)
MT36HTS51272F
“1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”
t
t
REFI)
CAS)
Serial Presence-Detect Matrix
t
CK
t
CK
t
Description
RAS and
MIN
MAX
t
WR)
)
t
RCD)
)
t
RP)
t
RC
t
RAS)
t
RRD)
240-Pin 4GB DDR2 SDRAM FBDIMM (DR, FB, x72)
t
32
WTR)
t
RC)
t
RTP)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1.18in/0.315–
Weak drivers
Dytes 0–116/
Dual rank/x4
DRAM/AMB
1/4 = 0.25ns
1/4 = 0.25ns
Range, MIN
Range, MIN
Range, MIN
256 bytes/
-53E, -667
-53E, -667
-53E, -667
-53E, -667
-53E, -667
-53E, -667
-53E, -667
-53E, -667
-53E, -667
176 bytes
FBDIMM
FBDIMM
0.354in
Entry
DDR2
7.8µs
15ns
-53E
-667
-53E
-667
-53E
-667
1Gb
4, 8
5ps
1.1
–
–
Serial Presence-Detect
DC
0C
3C
3C
3C
3C
92
11
09
12
49
25
07
10
51
01
04
0F
20
23
33
22
42
40
1E
00
B4
FE
01
1E
1E
03
03
07
01
02
D
©2006 Micron Technology, Inc. All rights reserved.
MT36HTS51272F
DC
92
11
09
12
49
25
07
10
51
01
04
0C
20
23
33
3C
22
3C
42
40
3C
1E
3C
00
B4
01
1E
1E
03
03
07
01
02
0F
FE
E
Preliminary
DC
3C
3C
3C
B4
92
11
09
12
49
25
07
10
51
01
04
0F
0C
20
23
33
3C
22
42
40
1E
00
FE
01
1E
1E
03
03
07
01
02
N