MT9HTF12872AY-53ED1 Micron Technology Inc, MT9HTF12872AY-53ED1 Datasheet - Page 32
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MT9HTF12872AY-53ED1
Manufacturer Part Number
MT9HTF12872AY-53ED1
Description
MODULE SDRAM DDR2 1GB 240DIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT9HTF12872AY-40ED1.pdf
(44 pages)
Specifications of MT9HTF12872AY-53ED1
Memory Type
DDR2 SDRAM
Memory Size
1GB
Speed
533MT/s
Package / Case
240-DIMM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 18:
pdf: 09005aef80e6f860, source: 09005aef80e5b799
HTF9C32_64_128x72AG_2.fm - Rev. C 6/05 EN
DQS input high pulse width
DQS input low pulse width
DQS output access time from CK/
CK#
DQS falling edge to CK rising –
setup time
DQS falling edge from CK rising
– hold time
DQS–DQ skew, DQS to last DQ
valid, per group, per access
DQS read preamble
DQS read postamble
DQS write preamble setup time
DQS write preamble
DQS write postamble
Write command to first DQS
latching transition
Parameter
AC Operating Conditions (Sheet 2 of 4)
Notes: 1–5; notes appear on page 35; 0°C ≤ T
AC Characteristics
256MB, 512MB, 1GB (x72, SR, ECC) 240-Pin DDR2 SDRAM UDIMM
Symbol
t
t
t
t
DQSCK
t
WPRES
t
t
t
t
DQSQ
t
DQSH
WPRE
t
WPST
DQSL
DQSS
t
RPRE
RPST
DSH
DSS
MIN
WL -
0.35
0.35
-400
0.35
0.25
0.2
0.2
0.9
0.4
0.4
0
-667
CASE
32
MAX
WL +
+400
0.25
240
1.1
0.6
0.6
≤ +85°C; V
MIN
WL -
Micron Technology, Inc., reserves the right to change products or specifications without notice.
0.35
0.35
-450
0.25
0.25
0.2
0.2
0.9
0.4
0.4
AC Timing and Operating Conditions
0
DD
-53E
Q = +1.8V ±0.1V, V
MAX
WL +
+450
0.25
300
1.1
0.6
0.6
©2003, 2004, 2005 Micron Technology, Inc. All rights reserved.
MIN
WL -
-500
0.35
0.35
0.25
0.25
0.2
0.2
0.9
0.4
0.4
0
-40E
DD
= +1.8V ±0.1V
MAX
+500
WL +
0.25
350
1.1
0.6
0.6
Units
t
t
t
t
t
t
t
t
t
CK
CK
ps
CK
CK
ps
CK
CK
ps
CK
CK
CK
12, 13,
Notes
15, 17
36
36
37
11