MT18VDDT6472AG-26AG4 Micron Technology Inc, MT18VDDT6472AG-26AG4 Datasheet - Page 19

• Manufacturer Part Number: MT18VDDT6472AG-26AG4
• Description: MODULE SDRAM DDR 512MB 184DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT18VDDT6472AG-26AG4

• Memory Type: DDR SDRAM
• Memory Size: 512MB
• Speed: 266MT/s
• Package / Case: 184-DIMM
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 15: Electrical Characteristics and Recommended AC Operating Conditions
DDR SDRAM Components Only
pdf: 09005aef808a331f, source: 09005aef80858037
DD18C32_64_128_256x72G.fm - Rev. E 9/04 EN
AC CHARACTERISTICS
PARAMETER
PRECHARGE command period
DQS read preamble
DQS read postamble
ACTIVE bank a to ACTIVE bank b command
DQS write preamble
DQS write preamble setup time
DQS write postamble
Write recovery time
Internal WRITE to READ command delay
Data valid output window
REFRESH to REFRESH command interval
Average periodic refresh interval
Terminating voltage delay to V
Exit SELF REFRESH to non-READ command
Exit SELF REFRESH to READ command
(Continued)
DD
256MB
512MB, 1GB,
2GB
256MB
512MB, 1GB,
2GB
256MB,
512MB
1GB
256MB, 512MB, 1GB, 2GB (x72, ECC, SR)
19
SYMBOL
t
t
WPRES
t
t
t
t
t
t
t
WPRE
t
WPST
t
t
Micron Technology, Inc., reserves the right to change products or specifications without notice.
XSNR
XSRD
RPRE
REFC
RPST
t
WTR
RRD
REFI
VTD
t
184-PIN DDR SDRAM RDIMM
WR
na
RP
127.5
MIN
0.25
200
0.9
0.4
0.4
15
15
15
75
0
1
t
0
QH -
-262
t
DQSQ
MAX
140.6
70.3
15.6
1.1
0.6
0.6
7.8
©2004 Micron Technology, Inc. All rights reserved.
UNITS
t
t
t
t
t
t
ns
ns
ns
ns
ns
µs
µs
µs
µs
ns
ns
ns
CK
CK
CK
CK
CK
CK
NOTES
18, 19
38
38
17
22
21
21
21
21