MT18VDDT6472AG-26AG4 Micron Technology Inc, MT18VDDT6472AG-26AG4 Datasheet - Page 13

• Manufacturer Part Number: MT18VDDT6472AG-26AG4
• Description: MODULE SDRAM DDR 512MB 184DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT18VDDT6472AG-26AG4

• Memory Type: DDR SDRAM
• Memory Size: 512MB
• Speed: 266MT/s
• Package / Case: 184-DIMM
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Absolute Maximum Ratings
nent damage to the device. This is a stress rating only,
and functional operation of the device at these or any
other conditions above those indicated in the opera-
Table 10: DC Electrical Characteristics and Operating Conditions
Notes: 1–5, 14; notes appear on pages 22–25; 0°C
Table 11: AC Input Operating Conditions
Notes: 1–5, 14; notes appear on pages 22–25; 0°C
pdf: 09005aef808a331f, source: 09005aef80858037
DD18C32_64_128_256x72G.fm - Rev. E 9/04 EN
PARAMETER/CONDITION
PARAMETER/CONDITION
Supply Voltage
I/O Supply Voltage
I/O Reference Voltage
I/O Termination Voltage (system)
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
INPUT LEAKAGE CURRENT
Any input 0V
1.35V (All other pins not under test = 0V)
OUTPUT LEAKAGE CURRENT
(DQs are disabled; 0V
OUTPUT LEVELS
High Current (V
Low Current (V
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
I/O Reference Voltage
Stresses greater than those listed may cause perma-
Voltage on V
Voltage on V
Voltage on V
Relative to V
Relative to V
Relative to V
OUT
OUT
REF
DD
DD
V
IN
= 0.373V, maximum V
SS
SS
SS
Q Supply
= V
Supply
and Inputs
. . . . . . . . . . . . . . . . . . . . . -1V to +3.6V
. . . . . . . . . . . . . . . . . . . . -1V to +3.6V
. . . . . . . . . . . . . . . . . . . . -1V to +3.6V
V
DD
DD
V
Q - 0.373V, minimum V
, V
OUT
REF
pin 0V
V
DD
Q)
REF
V
IN
, maximum V
REF
Command/
Address, RAS#,
CAS#, WE#, S0#,
CKE
CK, CK#
DQ, DQS
SYMBOL
, minimum V
V
V
V
T
T
REF
IH
IL
256MB, 512MB, 1GB, 2GB (x72, ECC, SR)
A
A
(
(
AC
(
TT
AC
AC
+70°C
+70°C; V
)
)
)
)
13
TT
)
tional sections of this specification is not implied.
Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
DD
V
0.49
SYMBOL
Voltage on I/O Pins
Operating Temperature
Storage Temperature (plastic) . . . . . . -55°C to +150°C
Short Circuit Output Current. . . . . . . . . . . . . . . 50mA
= V
V
V
REF
V
IH
V
IL
V
V
I
I
I
Relative to V
T
DDQ
MIN
OH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
OZ
OL
REF
(DC)
(DC)
I
DD
DD
TT
X
184-PIN DDR SDRAM RDIMM
+ 0.310
A
I
–
V
(ambient) . . . . . . . . . . . . . . . . . . . . .. 0°C to +70°C
Q = +2.5V ±0.2V
DD
Q
0.49
V
V
REF
REF
-16.8
MIN
16.8
-0.3
-10
2.3
2.3
X
-5
-5
+ 0.15
0.51
- 0.04 V
V
SS
V
REF
DD
MAX
. . . . . . . . . . . . -0.5V to V
Q 0.51
X
- 0.310
–
V
V
DD
V
REF
REF
DD
MAX
Q
2.7
2.7
10
X
+ 0.04
5
5
–
–
- 0.15
©2004 Micron Technology, Inc. All rights reserved.
+ 0.3
V
DD
UNITS
Q
V
V
V
UNITS
mA
mA
µA
µA
V
V
V
V
V
V
12, 25, 35
12, 25, 35
NOTES
DD
32, 36, 39
NOTES
32, 36
33, 34
6
Q +0.5V
6, 39
7, 39
25
25
47
47